Datasheet > M36W108TZN

M36W108TZN

更新时间： 2024-09-25 22:18:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
35页	248K
描述
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

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中文翻译

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数据手册

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M36W108TZN 数据手册

M36W108T

M36W108B

8 Mbit (1Mb x8, Boot Block) Flash Memory and

1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

NOT FOR NEW DESIGN

■ M36W108T and M36W108B are replaced

respectively by the M36W108AT and

M36W108AB

■ SUPPLY VOLTAGE

– V

= V

= 2.7V to 3.6V: for Program,

CCS

CCF

Erase and Read

BGA

LGA

■ ACCESS TIME: 100ns

■ LOW POWER CONSUMPTION

– Read: 40mA max. (SRAM chip)

– Stand-by: 30µA max. (SRAM chip)

– Read: 10mA max. (Flash chip)

– Stand-by: 100µA max. (Flash chip)

LBGA48 (ZM)

6 x 8 solder balls

LGA48 (ZN)

6 x 8 solder lands

FLASH MEMORY

■ 8 Mbit (1Mb x 8) BOOT BLOCK ERASE

Figure 1. Logic Diagram

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

CCF CCS

– Status Register bits and Ready/Busy Output

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main Blocks

A0-A19

DQ0-DQ7

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

M36W108T

M36W108B

■ 100,000 PROGRAM/ERASE CYCLES per

E1S

E2S

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M36W108T: D2h

– Device Code, M36W108B: DCh

SRAM

AI02509

■ 1 Mbit (128Kb x 8)

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

■ LOW V

DATA RETENTION: 2V

May 1999

1/35

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...35

中文翻译

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