Datasheet > M36W216T85ZA6T

M36W216T85ZA6T

更新时间： 2024-11-21 10:54:19

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
56页	340K
描述
Memory Circuit, 1MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66

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数据手册

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M36W216T85ZA6T 数据手册

M36W216T

M36W216B

16 Mbit (1Mb x16, Boot Block) Flash Memory

and 2 Mbit (128K x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

SRAM

■ 2 Mbit (128K x 16 bit)

– V

= 2.7V to 3.3V

DDF

DDS

PPF

■ ACCESS TIME: 70ns

= V

= 2.7V to 3.3V

DDQF

■ LOW V

DATA RETENTION: 1.5V

DDS

= 12V for Fast Program (optional)

■ POWER DOWN FEATURES USING TWO

■ ACCESS TIME: 85,100ns

CHIP ENABLE INPUTS

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

Figure 1. Packages

– Manufacturer Code: 20h

– Top Device Code, M36W216T: 88CEh

– Bottom Device Code, M36W216B: 88CFh

FLASH MEMORY

■ 16 Mbit (1Mb x16) BOOT BLOCK

FBGA

– 8 x 4 KWord Parameter Blocks (Top or

Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

Stacked LFBGA66 (ZA)

8 x 8 ball array

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

May 2001

1/56

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...56

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与M36W216T85ZA6T相关器件

型号	品牌	获取价格	描述	数据表
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M36W216TI85ZA1T	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Produc
M36W216TIZA	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Produc
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M36W416BG70ZA1T	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product