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M29W160ET90N6 PDF预览

M29W160ET90N6

更新时间: 2024-01-22 01:44:33
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
40页 666K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160ET90N6 数据手册

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M29W160ET  
M29W160EB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
= 2.7V to 3.6V for Program, Erase  
Figure 1. Packages  
V
CC  
and Read  
ACCESS TIMES: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
35 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
TSOP48 (N)  
12 x 20mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
FBGA  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
TFBGA48 (ZA)  
6 x 8mm  
64 bit Security Code  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W160ET: 22C4h  
Bottom Device Code M29W160EB: 2249h  
January 2004  
1/40  

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