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M29W008DT70N1E PDF预览

M29W008DT70N1E

更新时间: 2024-10-02 20:55:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
34页 462K
描述
1MX8 FLASH 3V PROM, 70ns, PDSO40, 10 X 20 MM, LEAD FREE, PLASTIC, TSOP-40

M29W008DT70N1E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:10 X 20 MM, LEAD FREE, PLASTIC, TSOP-40
针数:40Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.18最长访问时间:70 ns
其他特性:TOP BOOT BLOCK启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G40
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,15
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29W008DT70N1E 数据手册

 浏览型号M29W008DT70N1E的Datasheet PDF文件第2页浏览型号M29W008DT70N1E的Datasheet PDF文件第3页浏览型号M29W008DT70N1E的Datasheet PDF文件第4页浏览型号M29W008DT70N1E的Datasheet PDF文件第5页浏览型号M29W008DT70N1E的Datasheet PDF文件第6页浏览型号M29W008DT70N1E的Datasheet PDF文件第7页 
M29W008DT  
M29W008DB  
8 Mbit (1Mb x 8, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
2.7V to 3.6V for Program, Erase and Read  
ACCESS TIMES: 70ns, 90ns  
PROGRAMMING TIME: 10µs per Byte typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
Embedded Byte Program Algorithm  
Status Register bits and Ready/Busy  
Output  
19 MEMORY BLOCKS  
1 Boot Block (Top or Bottom location)  
2 Parameter and 16 Main Blocks  
TSOP40 (N)  
10 x 20mm  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTIPLE BLOCK PROTECTION/  
TEMPORARY UNPROTECTION MODE  
ERASE SUSPEND and RESUME MODES  
LOW POWER CONSUMPTION  
Standby and Automatic Standby modes  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
M29W008DT Device Code: D2h  
M29W008DB Device Code: DCh  
August 2004  
1/34  

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