Datasheet > M29W008DT70N6T

M29W008DT70N6T

更新时间： 2024-10-03 06:59:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管
页数	文件大小	规格书
34页	462K
描述
Flash, 1MX8, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

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M29W008DT70N6T 数据手册

M29W008DT

M29W008DB

8 Mbit (1Mb x 8, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Package

–

2.7V to 3.6V for Program, Erase and Read

■

ACCESS TIMES: 70ns, 90ns

PROGRAMMING TIME: 10µs per Byte typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

–

Embedded Byte Program Algorithm

Status Register bits and Ready/Busy

Output

■

19 MEMORY BLOCKS

–

1 Boot Block (Top or Bottom location)

2 Parameter and 16 Main Blocks

TSOP40 (N)

10 x 20mm

■

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTIPLE BLOCK PROTECTION/

TEMPORARY UNPROTECTION MODE

■

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

–

Standby and Automatic Standby modes

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

–

Defectivity below 1ppm/year

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

M29W008DT Device Code: D2h

M29W008DB Device Code: DCh

August 2004

1/34

12 3 4 5 6 7...34

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