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M29F040-90XK1TR PDF预览

M29F040-90XK1TR

更新时间: 2024-11-02 22:57:39
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
31页 234K
描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

M29F040-90XK1TR 数据手册

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M29F040  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29F040 is replaced by the M29F040B  
5V ± 10% SUPPLY VOLTAGE for PROGRAM,  
ERASE and READ OPERATIONS  
FAST ACCESS TIME: 70ns  
BYTE PROGRAMMING TIME: 10µs typical  
ERASE TIME  
– Block: 1.0 sec typical  
– Chip: 2.5 sec typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Data Polling and Toggle bits Protocol for  
P/E.C. Status  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
MEMORY ERASE in BLOCKS  
– 8 Uniform Blocks of 64 KBytes each  
– Block Protection  
Figure 1. Logic Diagram  
– Multiblock Erase  
ERASE SUSPEND and RESUME MODES  
LOW POWER CONSUMPTION  
– Read mode: 8mA typical (at 12MHz)  
– Stand-by mode: 25µA typical  
– Automatic Stand-by mode  
V
CC  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040  
Table 1. Signal Names  
G
A0-A18  
Address Inputs  
Data Input / Outputs  
Chip Enable  
DQ0-DQ7  
E
V
SS  
AI01372  
G
Output Enable  
Write Enable  
Supply Voltage  
Ground  
W
VCC  
VSS  
November 1999  
1/31  
This is information on a product still in production but not recommended for new designs.  

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