Datasheet > M29F002NT-120XK6TR

M29F002NT-120XK6TR

更新时间： 2024-01-22 01:24:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路
页数	文件大小	规格书
29页	199K
描述
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

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技术参数
数据手册

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M29F002NT-120XK6TR 技术参数

生命周期：	Transferred	零件包装代码：	QFJ
包装说明：	QCCJ,	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.36
最长访问时间：	120 ns	其他特性：	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES
启动块：	TOP	数据保留时间-最小值：	20
JESD-30 代码：	R-PQCC-J32	长度：	13.995 mm
内存密度：	2097152 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCJ	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	并行/串行：	PARALLEL
编程电压：	5 V	认证状态：	Not Qualified
座面最大高度：	3.56 mm	最大供电电压 (Vsup)：	5.25 V
最小供电电压 (Vsup)：	4.75 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
类型：	NOR TYPE	宽度：	11.455 mm

M29F002NT-120XK6TR 数据手册

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M29F002T, M29F002NT, M29F002B

Write. Writeoperationsareusedto giveInstruction

Commands to the memory or to latch input data to

be programmed.Awrite operationis initiatedwhen

Chip Enable E is Low and Write Enable W is Low

with OutputEnableG High. Addressesare latched

on the fallingedgeof W or E whicheveroccurs last.

Commandsand InputDataarelatchedontherising

edge of W or E whichever occurs first.

previously protected block can be temporarily un-

protected in order to change stored data. The

temporaryunprotectionmode is activatedby bring-

ing RPNC to V_ID. During the temporary unprotec-

tion mode the previously protected blocks are

unprotected.A block can be selectedand data can

be modified by executing the Erase or Program

instruction with the RPNCsignal held atV_ID. When

RPNC is returned to V_IH, all the previously pro-

tected blocks are again protected.

Output Disable. The data outputsare high imped-

ance when the Output Enable G is High with Write

Enable W High.

Block Unprotection. All protected blocks can be

unprotected on programming equipment to allow

updating of bit contents. All blocks must first be

protectedbefore the unprotectionoperation.Block

unprotectionis activated when A9, G and E are at

V_IDand A12, A15 at V_IH. The Block Unprotection

algorithm is shown in Figure 15. Unprotection is

initiatedby the edgeof Wfallingto V_IL. Aftera delay

of 10ms, the unprotection operation is ended by

rising W to V_IH. Unprotection verify is achieved by

bringing G and E to V_ILwhile A0 is at V_IL, A6 and

A1 are at V_IHand A9 remains at V_ID. In these

conditions,reading the output data will yield 00h if

the block defined by the inputs A13-A17 has been

succesfullyunprotected.Eachblockmustbe sepa-

rately verified by giving its address in order to

ensure that it has been unprotected.

Standby. The memory is in standby when Chip

Enable E is High and the P/E.C. is idle. The power

consumption is reduced to the standby level and

the outputs are high impedance, independent of

the Output Enable G or Write Enable W inputs.

Automatic Standby. After 150ns of bus inactivity

and when CMOS levels are driving the addresses,

the chip automatically enters a pseudo-standby

mode whereconsumptionis reducedto the CMOS

standby value, while outputs still drive the bus.

Electronic Signature. Two codes identifying the

manufacturerand the devicecan be read from the

memory. These codes allow programming equip-

ment or applications to automatically match their

interface to the characteristics of the M29F002.

The Electronic Signature is output by a Read op-

erationwhenthe voltageappliedto A9 is at V and

INSTRUCTIONS AND COMMANDS

addressinput A1 is Low.Themanufacturercodeis

output when the Address input A0 is Low and the

devicecodewhen thisinput is High.OtherAddress

inputs are ignored.

The Command Interface latches commands writ-

ten to the memory. Instructions are made up from

one or more commands to perform Read Memory

Array, ReadElectronic Signature,Read Block Pro-

tection, Program, Block Erase, Chip Erase, Erase

Suspend and Erase Resume. Commands are

made of addressand data sequences.

TheElectronic Signaturecan also be read, without

raisingA9 to V , bygiving the memory the Instruc-

tion AS.

Block Protection. Each block can be separately

protected against Program or Erase on program-

ming equipment. Block protection provides addi-

tional data security, as it disables all program or

erase operations. This mode is activated when

both A9 and G are raisedto V_IDand an address in

the blockis appliedon A13-A17.TheBlockProtec-

tion algorithm is shown in Figure 14. Block protec-

tion is initiatedon the edgeof W fallingto V_IL. Then

after a delay of 100µs, the edge of W rising to V_IH

ends the protection operations. Block protection

verify is achieved by bringing G, E, A0 and A6 to

V_ILand A1 to V_IH, while W is at V_IHand A9 at V_ID.

Undertheseconditions,readingthedataoutput will

yield 01h if the block defined by the inputs on

A13-A17 is protected. Any attempt to program or

erase a protected block will be ignored by the

device.

Table 7. Commands

Hex Code

00h

Command

Invalid/Reserved

10h

Chip Erase Confirm

Reserved

20h

30h

Block Erase Resume/Confirm

Set-up Erase

80h

Read Electronic Signature/

Block Protection Status

90h

A0h

B0h

F0h

Program

Erase Suspend

Read Array/Reset

Block Temporary Unprotection. This feature is

available on M29F002T and M29F002B only. Any

7/29

1...4 5 678 9 10...29

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