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M25P80-VME3P PDF预览

M25P80-VME3P

更新时间: 2024-11-06 14:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
7页 131K
描述
1M X 8 FLASH 2.7V PROM, PDSO8, 8 X 6 MM, ROHS COMPLIANT, MLP-8

M25P80-VME3P 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SON,Reach Compliance Code:compliant
风险等级:5.69Is Samacsys:N
最大时钟频率 (fCLK):50 MHzJESD-30 代码:R-PDSO-N8
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:2.7 V
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPEBase Number Matches:1

M25P80-VME3P 数据手册

 浏览型号M25P80-VME3P的Datasheet PDF文件第2页浏览型号M25P80-VME3P的Datasheet PDF文件第3页浏览型号M25P80-VME3P的Datasheet PDF文件第4页浏览型号M25P80-VME3P的Datasheet PDF文件第5页浏览型号M25P80-VME3P的Datasheet PDF文件第6页浏览型号M25P80-VME3P的Datasheet PDF文件第7页 
M25PXX  
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory  
With 40 MHz or 50 MHz SPI Bus Interface  
DATA BRIEF  
FEATURES SUMMARY  
512Kbit to 32Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (256 Kbit or 512Kbit)  
Bulk Erase (512Kbit to 32Mbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz to 50MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signatures  
VDFPN8 (ME)  
8x6mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(20xxh)  
RES Instruction, One-Byte, Signature, for  
backward compatibility  
VDFPN8 (MP)  
(MLP8)  
More than 100000 Erase/Program Cycles per  
Sector  
More than 20 Year Data Retention  
Table 1. Product List  
Reference  
Part Number  
M25P32  
M25P16  
M25P80  
M25P40  
M25P20  
M25P10-A  
M25P05-A  
SO16 (MF)  
300 mil width  
M25Pxx  
8
1
SO8 (MN)  
150 mil width  
October 2004  
1/7  
For further information contact your local ST sales office.  

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