Datasheet > M24M02-DRMN6TG

M24M02-DRMN6TG

更新时间： 2024-11-15 00:54:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
38页	658K
描述
2-Mbit serial IC bus EEPROM

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获取价格

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M24M02-DRMN6TG 数据手册

M24M02-DR

2-Mbit serial I²C bus EEPROM

Datasheet - production data

Features

• Compatible with all I C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

SO8 (MN)

150 mil width

• Memory array:

– 2 Mbit (256 Kbyte) of EEPROM

– Page size: 256 byte

– Additional Write lockable page

• Single supply voltage:

WLCSP

– 1.8 V to 5.5 V over –40 °C / +85 °C

•

Write:

– Byte Write within 10 ms

– Page Write within 10 ms

• Random and sequential Read modes

• Write protect of the whole memory array

• Enhanced ESD/Latch-Up protection

• More than 4 million Write cycles

• More than 200-years data retention

Packages

• SO8 ECOPACK2

• WLCSP ECOPACK2

July 2015

DocID18204 Rev 8

1/38

This is information on a product in full production.

www.st.com

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