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M24C64-FBN6GB PDF预览

M24C64-FBN6GB

更新时间: 2024-11-27 19:40:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
34页 271K
描述
8KX8 I2C/2-WIRE SERIAL EEPROM, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8

M24C64-FBN6GB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:compliant风险等级:5.09
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.27 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:NOT APPLICABLE
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.33 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

M24C64-FBN6GB 数据手册

 浏览型号M24C64-FBN6GB的Datasheet PDF文件第2页浏览型号M24C64-FBN6GB的Datasheet PDF文件第3页浏览型号M24C64-FBN6GB的Datasheet PDF文件第4页浏览型号M24C64-FBN6GB的Datasheet PDF文件第5页浏览型号M24C64-FBN6GB的Datasheet PDF文件第6页浏览型号M24C64-FBN6GB的Datasheet PDF文件第7页 
M24C64-W M24C64-R M24C64-F  
M24C32-W M24C32-R M24C32-F  
64 Kbit and 32 Kbit Serial I²C bus EEPROM  
Feature summary  
2
Two-Wire I C serial interface  
Supports 400kHz Protocol  
Single supply voltage:  
– 2.5 to 5.5V for M24Cxx-W  
– 1.8 to 5.5V for M24Cxx-R  
– 1.7 to 5.5V for M25Cxx-F  
PDIP8 (BN)  
Write Control Input  
Byte and Page Write (up to 32 Bytes)  
Random And Sequential Read modes  
Self-Timed programming cycle  
Automatic address incrementing  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Write cycles  
More than 40-year data retention  
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
UFDFPN8 (MB)  
2x3mm² (MLP)  
July 2006  
Rev 8  
1/34  
www.st.com  
1

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