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M04N60 PDF预览

M04N60

更新时间: 2024-11-18 05:44:31
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
2页 245K
描述
N Channel MOSFET

M04N60 数据手册

 浏览型号M04N60的Datasheet PDF文件第2页 
N Channel MOSFET  
4.0A  
M04N60  
Robust High Voltage Termination  
Avalanche Energy Specified  
Source-to-Drain Diode Recovery Time Comparable to  
a Discrete Fast Recovery Diode  
TO-220  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25℃)  
PARAMETERS  
Continuous Drain Current  
SYMBOL  
ID  
MIN  
TYP  
MAX  
3.6  
UNITS  
A
CONDITION  
VGS =10 V, Ta=25℃  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
V(BR)DSS  
IDSS  
600  
V
VGS = 0 V, ID = 250 μA  
0.1  
0.5  
100  
100  
4.0  
2.2  
mA  
VDS = 600 V, VGS = 0 V  
DS = 480 V, VGS = 0 V, TJ = 125℃  
Vgsf = 20 V, VDS = 0 V  
V
Gate-Source Leakage Current-Forward  
Gate-Source Leakage Current-Reverse  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
IGSSF  
IGSSR  
VGS(th)  
RDS(on)  
gFS  
nA  
nA  
V
Vgsr = 20 V, VDS = 0 V  
2.0  
2.5  
VDS = VGS, ID = 250 μA  
VGS = 10 V, ID = 2.2A *  
VDS = 50 V, ID = 2.2A *  
S
pF  
pF  
Ciss  
660  
86  
19  
11  
13  
35  
14  
V
DS = 25 V, VGS = 0 V, f = 1.0 MHz  
Coss  
Crss  
td(on)  
tr  
td(off)  
tf  
pF  
ns  
ns  
ns  
ns  
V
DD = 300 V, ID =3.6 A, VGS = 10 V,  
Rise Time  
Turn-Off Delay Time  
Fall Time  
R
G = 12*  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
Qgs  
Qgd  
31  
4.6  
17  
nC  
nC  
nC  
VDS = 360 V, ID = 3.6 A, VGS = 10 V *  
Internal Drain Inductance  
LD  
4.5  
7.5  
nH  
Measured from the drain lead 0.25” from package to  
center of die  
Measured from the source lead 0.25” from package  
to source bond pad  
Internal Drain Inductance  
LS  
nH  
Total Power Dispation  
Thermal Resistance – Junction to Case  
Operating and Storage Temperature  
PD  
θJC  
74  
1.7  
150  
W
/W  
TJ, TSTG  
-55  
SOURCE-DRAIN DIODE CHARACTERISTICS  
Forward On-Voltage(1)  
Forward Turn-On Time  
Reverse Recovery Time  
VSD  
ton  
trr  
1.6  
V
ns  
ns  
IS = 3.6 A, VGS = 0 V, dIS/dt = 100A/µs  
**  
370  
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%  
** Negligible, Dominated by circuit inductance  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
TEL: (650) 9389294 FAX: (650) 9389295  

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