N Channel MOSFET
4.0A
M04N60
ꢀ
ꢀ
ꢀ
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
TO-220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETERS
Continuous Drain Current
SYMBOL
ID
MIN
TYP
MAX
3.6
UNITS
A
CONDITION
VGS =10 V, Ta=25℃
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
V(BR)DSS
IDSS
600
V
VGS = 0 V, ID = 250 μA
0.1
0.5
100
100
4.0
2.2
mA
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125℃
Vgsf = 20 V, VDS = 0 V
V
Gate-Source Leakage Current-Forward
Gate-Source Leakage Current-Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
nA
nA
V
Vgsr = 20 V, VDS = 0 V
2.0
2.5
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 2.2A *
VDS = 50 V, ID = 2.2A *
Ω
S
pF
pF
Ciss
660
86
19
11
13
35
14
V
DS = 25 V, VGS = 0 V, f = 1.0 MHz
Coss
Crss
td(on)
tr
td(off)
tf
pF
ns
ns
ns
ns
V
DD = 300 V, ID =3.6 A, VGS = 10 V,
Rise Time
Turn-Off Delay Time
Fall Time
R
G = 12Ω *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
31
4.6
17
nC
nC
nC
VDS = 360 V, ID = 3.6 A, VGS = 10 V *
Internal Drain Inductance
LD
4.5
7.5
nH
Measured from the drain lead 0.25” from package to
center of die
Measured from the source lead 0.25” from package
to source bond pad
Internal Drain Inductance
LS
nH
Total Power Dispation
Thermal Resistance – Junction to Case
Operating and Storage Temperature
PD
θJC
74
1.7
150
W
℃/W
℃
TJ, TSTG
-55
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
VSD
ton
trr
1.6
V
ns
ns
IS = 3.6 A, VGS = 0 V, dIS/dt = 100A/µs
**
370
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
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