Datasheet > LY625128RV

LY625128RV

更新时间： 2024-11-23 05:44:27

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
18页	244K
描述
512K X 8 BIT LOW POWER CMOS SRAM

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LY625128RV 数据手册

LY625128

512K X 8 BIT LOW POWER CMOS SRAM

Rev. 2.2

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Description

Initial Issue

Revised I_SB1/I_DR

Issue Date

Jul.19.2005

Oct.31.2005

Revised Test Condition of I_CC

Added -45ns Spec.

Added P-DIP PKG

Revised Test Condition of I_SB1/I_DR

Adding PKG type : 44 TSOP-II

Adding SL Spec.

Rev. 1.2

Rev. 1.3

Rev. 1.4

Rev. 1.5

Rev. 2.0

Sep.20.2006

Jan.12.2007

May.14.2007

Jun.4.2007

Jul.11.2007

Revised ABSOLUTE MAXIMUN RATINGS

Rev. 2.1

Mar.30.2009

℃

Added I_SB1/I_DRvalues when T_A= 25 and T_A= 40

FEATURES ORDERING INFORMATION

Revised

Lead free and green package available to Green package

available

ORDERING INFORMATION

Added packing type in

ABSOLUTE MAXIMUN RATINGS

Deleted T_SOLDERin

Deleted -35ns Spec.

Revised V_DR

Rev. 2.2

Sep.11.2009

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

12 3 4 5 6 7...18

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