Datasheet > LY61L5128AML-10

LY61L5128AML-10

更新时间： 2024-11-24 00:54:55

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
11页	242K
描述
512K X 8 BIT HIGH SPEED CMOS SRAM

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LY61L5128AML-10 数据手册

LY61L5128A

512K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.4

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Description

Initial Issue

Issue Date

July.12. 2012

July.19. 2012

≧

≦

.“CE# V_CC- 0.2V” revised as ”CE# 0.2” for TEST

CONDITION of Average Operating Power supply Current

Icc1 on page3

Rev.1.2

Rev.1.3

Add “Green package available” on page 1

Nov. 02. 2012

June. 04. 2013

1.Revise “TEST CONDITION” for VOH, VOL on page 3

I_OH= -8mA revised as -4mA

I^OL=4mA revised as 8mA

2.Revise VIH(max) & VIL(min) note on page 3

VIH(max) = VCC + 2.0V for pulse width less than 6ns.

VIL(min) = VSS - 2.0V for pulse width less than 6ns.

Rev.1.4

Revised the address pin sequence of TSOP-II pin configuration Oct. 30. 2013

on page 3 in order to be compatible with industry convention.

(No function specifications and applications have been changed

and all the characteristics are kept all the same as Rev 1.3 )

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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