Datasheet > LX3052

LX3052

更新时间： 2024-11-28 23:48:55

品牌	Logo	应用领域
其他 - ETC		光电
页数	文件大小	规格书
5页	116K
描述
InGaAs/InP PIN Photo Detectors

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中文翻译

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数据手册

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LX3052 数据手册

LX3050/52 12.5Gbps

Coplanar InGaAs/InP PIN Photo Diode

O P T O - E L E C T R O N I C P R O D U C T S

P R E L I M I N A R Y D A T A S H E E T

KEY FEATURES

DESCRIPTION

Sꢀ

Microsemi’s InGaAs/InP PIN Photo

Diode chips are ideal for high bandwidth waveguide photo diodes are currently

1310nm and 1550nm optical networking

applications.

The LX305X series of coplanar

SꢀLX3050 single die

SꢀLX3052, 1x4 array die

SꢀCoplanar Waveguide , 50ohm

SꢀHigh Responsivity

SꢀLow Dark Current

SꢀHigh Bandwidth

SꢀAnode/Cathode on Illuminated Side

Sꢀ125µm Pad pitch

Sꢀdie good for bond wire or flip chip

applications

offered in die form allowing

manufacturers the versatility of

custom assembly configurations

including traditional wirebond or flip

The device series offers impedance

matched coplanar waveguide structure for chip assembly

high performance and sensitivity.

This device is ideal for

manufacturers of optical receivers,

transponders, optical transmission

modules and combination PIN photo

diode – transimpedance amplifier.

APPLICATIONS

Sꢀ1310nm CATV Optical Applications

Sꢀ1550nm DWDM Optical Applications

SꢀSONET/SDH, ATM

Sꢀ10 Gigabit Ethernet, Fibre Channel

Sꢀ1310nm VCSEL receivers

Microsemi can assemble die on

submounts and custom

configurations.

BENEFITS

SꢀLarge Wirebond Contact Pads

SꢀLow Contact Resistance

SꢀWire bond or flip chip applications

SꢀGround- signal-Ground pad

configuration for standard RF test

probes

PRODUCT HIGHLIGHT

•

Coplanar Design (gnd-signal-gnd) 50 ohm

characteristic impedance

•

125 um standard pad pitch for ease of test

Large 75um x 75um pad size for ease of

packaging

•

Wire bond or Flip Chip capability

Rev. 1.2

Microsemi

Page 1

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

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