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LV2209RLRM PDF预览

LV2209RLRM

更新时间: 2024-11-25 19:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 132K
描述
33pF, 25V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92, PLASTIC, CASE 182-06, TO-226AC, 2 PIN

LV2209RLRM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:O-PBCY-T2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81其他特性:HIGH RELIABILITY
最小击穿电压:25 V配置:SINGLE
二极管电容容差:10%最小二极管电容比:2.5
标称二极管电容:33 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225最大功率耗散:0.28 W
认证状态:Not Qualified最小质量因数:200
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

LV2209RLRM 数据手册

 浏览型号LV2209RLRM的Datasheet PDF文件第2页浏览型号LV2209RLRM的Datasheet PDF文件第3页 
MMBV2101LT1 Series,  
MV2105, MV2101, MV2109,  
LV2205, LV2209  
Silicon Tuning Diodes  
6.8–100 pF, 30 Volts  
Voltage Variable Capacitance Diodes  
http://onsemi.com  
These devices are designed in popular plastic packages for the high  
volume requirements of FM Radio and TV tuning and AFC, general  
frequency control and tuning applications. They provide solid–state  
reliability in replacement of mechanical tuning methods. Also  
available in a Surface Mount Package up to 33 pF.  
3
1
Cathode  
Anode  
SOT–23  
TO–92  
2
1
Cathode  
Anode  
High Q  
Controlled and Uniform Tuning Ratio  
Standard Capacitance Tolerance – 10%  
Complete Typical Design Curves  
MARKING  
DIAGRAM  
3
MAXIMUM RATINGS  
1
Rating  
Reverse Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
XXX M  
2
V
R
TO–236AB, SOT–23  
CASE 318–08  
STYLE 8  
Forward Current  
I
F
200  
mAdc  
XXX  
M
= Device Code*  
= Date Code  
* See Table  
Forward Power Dissipation  
P
D
mW  
mW/°C  
@ T = 25°C  
MMBV21xx  
225  
1.8  
A
Derate above 25°C  
@ T = 25°C  
Derate above 25°C  
MV21xx  
LV22xx  
280  
2.8  
A
XX  
XXXX  
YWW  
Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
J
T
stg  
–55 to +150  
DEVICE MARKING  
1
2
MMBV2101LT1 = M4G  
MMBV2103LT1 = 4H  
MMBV2105LT1 = 4U  
MMBV2107LT1 = 4W  
MMBV2108LT1 = 4X  
MMBV2109LT1 = 4J  
MV2101 = MV2101  
MV2105 = MV2105  
MV2109 = MV2109  
LV2205 = LV2205  
LV2209 = LV2209  
TO–226AC, TO–92  
CASE 182  
XX  
= Device Code Line 1*  
XXXX = Device Code Line 2*  
= Date Code  
* See Table  
STYLE 1  
M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Preferred devices are recommended choices for future use  
and best overall value.  
Characteristic  
Symbol Min Typ Max  
Unit  
Reverse Breakdown Voltage  
V
(BR)R  
Vdc  
(I = 10 µAdc)  
R
MMBV21xx, MV21xx  
LV22xx  
30  
25  
Reverse Voltage Leakage  
Current  
(V = 25 Vdc, T = 25°C)  
I
R
0.1  
µAdc  
R
A
Diode Capacitance  
TC  
280  
ppm/°C  
C
Temperature Coefficient  
(V = 4.0 Vdc, f = 1.0 MHz)  
R
Semiconductor Components Industries, LLC, 2001  
685  
Publication Order Number:  
October, 2001 – Rev. 3  
MMBV2101LT1/D  

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