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LTE-4216C PDF预览

LTE-4216C

更新时间: 2024-11-15 11:41:31
品牌 Logo 应用领域
台湾光宝 - LITEON 光电二极管
页数 文件大小 规格书
2页 276K
描述
GaAlAs T-1 Standard 3 Infrared Emitting Diode

LTE-4216C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownHTS代码:8541.40.20.00
风险等级:5.92Is Samacsys:N
配置:SINGLE最大正向电流:0.06 A
JESD-609代码:e0功能数量:1
最高工作温度:85 °C最低工作温度:-40 °C
光电设备类型:INFRARED LED峰值波长:940 nm
形状:ROUND尺寸:3 mm
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

LTE-4216C 数据手册

 浏览型号LTE-4216C的Datasheet PDF文件第2页 
GaAlAs T-1 Standard 3  
Infrared Emitting Diode  
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C  
Features  
Package Dimensions  
Selected to specific on-line intensity and radiant inten-  
sity ranges.  
Low cost plastic end looking package.  
Mechanically and spectrally matched to the LTR-4206  
series of phototransistor.  
The LTE-4206 series are made with Gallium Aluminum  
Arsenide window layer on Gallium Arsenide infrared  
emitting diodes.  
Description  
The LTE-4206 series are high intensity Gallium Aluminum  
Arsenide infrared emitting diodes mounted in clear plas-  
tic end looking packages. The LTE-4206 series provides  
a broad range of intensity selection. Suffix C-smoke  
color lens.  
Notes:  
1. All dimensions are in millimeters (inches).  
2. Tolerance is 0.25mm (.010") unless otherwise noted.  
3. Protruded resin under flange is 1.5mm (.059") max.  
4. Lead spacing is measured where the leads emerge from  
the package.  
5. Specifications are subject to change without notice.  
Absolute Maximum Ratings at Ta=25  
Parameter  
Maximum Rating  
Unit  
Power Dissipation  
90  
1
mW  
A
Peak forward Current (300pps, 10 s pulse)  
Continuous Forward Current  
Reverse Voltage  
60  
5
mA  
V
-40 to +85  
Operating Temperature Range  
Storage Temperature Range  
-55 to +100  
Lead Soldering Temperature  
[1.6mm (.063 in.) from body]  
260 for 5 Seconds  
Electrical Optical Characteristics at Ta=25  
Test  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Condition  
*Aperture Radiant Incidence  
Radiant Intensity  
Ee  
0.3  
0.7  
5.26  
940  
50  
mW/cm2  
mW/sr  
nm  
IF=20mA  
Ie  
2.25  
IF=20mA  
IF=20mA  
IF=20mA  
IF=20mA  
VR=5V  
Peak Emission Wavelength  
Spectral Line Half-Width  
Forward Voltage  
Peak  
nm  
VF  
IR  
1.2  
1.6  
V
Reverse Current  
100  
A
View Angle (See Fig.6)  
2
1/2  
20  
deg  
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm2 in perpendicular to and  
centered on the mechanical axis of the lens and 26.8mm from lens.  
10-10  

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