是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | DIP | 包装说明: | DIP, DIP16,.3 |
针数: | 16 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.33 | 高边驱动器: | YES |
输入特性: | SCHMITT TRIGGER | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-PDIP-T16 | JESD-609代码: | e3 |
功能数量: | 4 | 端子数量: | 16 |
最高工作温度: | 70 °C | 最低工作温度: | |
输出特性: | TOTEM-POLE | 输出极性: | TRUE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 4.5/18 V | 认证状态: | Not Qualified |
座面最大高度: | 3.81 mm | 子类别: | MOSFET Drivers |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 60 µs | 接通时间: | 2000 µs |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LTC1156CNND | Linear |
获取价格 |
暂无描述 |
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LTC1156CS | Linear |
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Quad High Side Micropower MOSFET Driver with Internal Charge Pump |
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LTC1156CSW | Linear |
获取价格 |
LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump; Package: SO; |
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LTC1156CSW#PBF | Linear |
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LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump; Package: SO; |
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LTC1156CSW#TR | Linear |
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LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump; Package: SO; |
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LTC1156CSW#TRPBF | Linear |
获取价格 |
LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump; Package: SO; |
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LTC1157 | Linear |
获取价格 |
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
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LTC1157 | ADI |
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3.3V、双通道、微功率、高压侧 / 低压侧 MOSFET 驱动器 |
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LTC1157C | Linear |
获取价格 |
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
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LTC1157CN8 | Linear |
获取价格 |
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
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