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LT1037MP PDF预览

LT1037MP

更新时间: 2024-11-30 21:11:39
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 放大器光电二极管
页数 文件大小 规格书
24页 305K
描述
Operational Amplifier, 1 Func, BIPolar, PDIP8, PLASTIC, DIP-8

LT1037MP 技术参数

生命周期:Contact Manufacturer包装说明:DIP,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.58
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
标称共模抑制比:126 dBJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.81 mm
负供电电压上限:-22 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
座面最大高度:5.08 mm子类别:Operational Amplifier
供电电压上限:22 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL标称均一增益带宽:60000 kHz
宽度:7.62 mmBase Number Matches:1

LT1037MP 数据手册

 浏览型号LT1037MP的Datasheet PDF文件第2页浏览型号LT1037MP的Datasheet PDF文件第3页浏览型号LT1037MP的Datasheet PDF文件第4页浏览型号LT1037MP的Datasheet PDF文件第5页浏览型号LT1037MP的Datasheet PDF文件第6页浏览型号LT1037MP的Datasheet PDF文件第7页 
LT1007, LT1007A, LT1037, LT1037A  
LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS  
SLOS017C – D3195, FEBRUARY 1989 – REVISED JANUARY 1993  
DW PACKAGE  
(TOP VIEW)  
Maximum Equivalent Input Noise Voltage:  
3.8 nV/Hz at 1 kHz  
4.5 nV/Hz at 10 Hz  
NC  
NC  
NC  
NC  
TRIM  
IN –  
IN +  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
Low Peak-to-Peak Equivalent Input Noise  
Voltage: 60 nV Typ From 0.1 Hz to 10 Hz  
V
TRIM  
V
IO  
IO  
Slew Rate (LT1037 and LT1037A):  
11 V/µs Min  
V
CC+  
OUT  
NC  
NC  
LT1007A and LT1037A Specifications:  
V
CC –  
NC  
NC  
High Voltage Amplification:  
NC  
7 V/µV Min, R = 2 kΩ  
L
3 V/µV Min, R = 600 Ω  
L
JG OR P PACKAGE  
(TOP VIEW)  
Low Input Offset Voltage:  
25 µV Max  
Low Input Offset Voltage Temperature  
Coefficient: 0.6 µV/°C Max  
V
TRIM  
IN –  
IN +  
V
V
OUT  
NC  
TRIM  
1
2
3
4
8
7
6
5
IO  
IO  
CC +  
Common-Mode Rejection Ratio: 117 dB Min  
V
CC –  
description  
NC – No internal connection  
These monolithic operational amplifiers feature  
extremely low-noise performance and out  
standing precision and speed specifications.The typical differential voltage amplification (at T = 25°C) of these  
A
devices is an extremely high 20 V/µV driving a 2-kload to ±12 V and 12 V/µV driving, a 600-load to ±10V.  
In the design, processing, and testing of the device, particular attention has been paid to the optimization of the  
entire distribution of several key parameters. Consequently, the specifications of even the lowest-cost grades  
(the LT1007C and the LT1037C) have been greatly improved compared to equivalent grades of competing  
amplifiers.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
IO  
T
A
SMALL-OUTLINE  
(DW)  
CERAMIC DIP  
(JG)  
PLASTIC DIP  
(P)  
AT 25°C  
60 µV  
25 µV  
60 µV  
25 µV  
60 µV  
25 µV  
60 µV  
25 µV  
LT1007CDW  
LT1007CP  
LT1007ACP  
LT1037CP  
LT1037ACP  
LT1007MP  
LT1007AMP  
LT1037MP  
LT1037AMP  
0°C  
to  
70°C  
LT1037CDW  
LT1007MJG  
LT1007AMJG  
LT1037MJG  
LT1037AMJG  
55°C  
to  
125°C  
The DW packages are available taped and reeled. Add the suffix R to the device type,  
(e.g.,LT1007CDWR).  
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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