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LSU310_TO-18 PDF预览

LSU310_TO-18

更新时间: 2024-01-13 03:40:12
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描述
N-CHANNEL JFET

LSU310_TO-18 数据手册

  
U310  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U310  
FEATURES  
The LSU310 is a high frequency n-channel JFET  
DIRECT REPLACEMENT FOR SILICONIX LSU310  
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE  
offering a wide range and low noise performance. The  
hermetically sealed TO-18 package is well suited for  
high reliability and harsh environment applications.  
Gpg = 11.5dB  
NF = 2.7dB  
ABSOLUTE MAXIMUM RATINGS @ 25°C1  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current  
MAXIMUM VOLTAGES  
Gate to Drain Voltage or Gate to Source Voltage  
LSU310 Benefits:  
55°C to +150°C  
55°C to +135°C  
ƒ
ƒ
ƒ
High Power Low Noise gain  
Dynamic Range greater than 100dB  
Easily matched to 75input  
500mW  
10mA  
25V  
LSU310 Applications:  
ƒ
ƒ
ƒ
UHV / VHF Amplifiers  
Mixers  
Oscillators  
LSU310 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(F)  
VGS(off)  
IDSS  
CHARACTERISTIC  
MIN  
25  
0.7  
2  
24  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
1
6.5  
60  
‐‐  
UNIT  
V
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Forward Voltage  
Gate to Source Cutoff Voltage  
Drain to Source Saturation Current2  
Gate Operating Current (Note 3)  
Drain to Source On Resistance  
VDS = 0V, IG = 1µA  
VDS = 0V, IG = 10mA  
VDS = 10V, ID = 1nA  
VDS = 10V, VGS = 0V  
VDG = 9V, ID = 10mA  
VGS = 0V, ID = 1mA  
mA  
pA  
Ω
IG  
rDS(on)  
15  
35  
‐‐  
‐‐  
LSU310 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
gfs  
CHARACTERISTIC  
Forward Transconductance  
Output Conductance  
Input Capacitance  
MIN  
8
‐‐  
TYP.  
14  
110  
4
MAX  
‐‐  
250  
5
UNIT  
mS  
µS  
CONDITIONS  
VDS = 10V, ID = 10mA , f = 1kHz  
gos  
Ciss  
‐‐  
pF  
VDS = 10V, VGS = 10V , f = 1MHz  
Click To Buy  
Crss  
en  
Reverse Transfer Capacitance  
Equivalent Noise Voltage  
‐‐  
6
1.9  
‐‐  
2.5  
‐‐  
nV/Hz  
VDS = 10V, ID = 10mA , f = 100Hz  
LSU310 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTIC  
MIN  
TYP  
MAX  
UNIT  
CONDITIONS  
NF  
Noise Figure  
f = 105MHz  
f = 450MHz  
f = 105MHz  
‐‐  
‐‐  
‐‐  
1.5  
2.7  
16  
‐‐  
‐‐  
‐‐  
dB  
dB  
Gpg  
gfg  
Power Gain3  
f = 450MHz  
f = 105MHz  
‐‐  
‐‐  
11.5  
14  
‐‐  
‐‐  
VDS = 10V, ID = 10mA  
Forward Transconductance  
f = 450MHz  
f = 105MHz  
f = 450MHz  
‐‐  
‐‐  
‐‐  
13  
‐‐  
‐‐  
‐‐  
mS  
gog  
Output Conductance  
0.16  
0.55  
Note 1 Absolute maximum ratings are limiting values above which LSU310 serviceability may be impaired.  
Note 2 Pulse test : PW 300µs, Duty Cycle 3%  
Note 3 Measured at optimum input noise match  
Micross Components Europe  
TO-18 (Bottom View)  
Available Packages:  
LSU310 in TO-18  
LSU310 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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