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LSJ109-TO-18

更新时间： 2024-11-24 21:05:59
品牌 Logo 应用领域
凌特 - Linear 开关晶体管
页数 文件大小 规格书
1页 288K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, HERMETIC SEALED PACKAGE-3

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LSJ109-TO-18 技术参数

生命周期：Contact Manufacturer零件包装代码：BCY
包装说明：CYLINDRICAL, O-MBCY-W3针数：3
Reach Compliance Code：compliant风险等级：5.72
其他特性：HIGH RELIABILITY, LOW NOISE配置：SINGLE
最大漏源导通电阻：12 ΩFET 技术：JUNCTION
最大反馈电容 (Crss)：15 pFJEDEC-95代码：TO-18
JESD-30 代码：O-MBCY-W3元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：WIRE
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

LSJ109-TO-18 数据手册

  
LSJ109  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix J109  
FEATURES  
This n-channel JFET is optimised for low noise high  
DIRECT REPLACEMENT FOR SILICONIX J109  
LOW ON RESISTANCE  
FAST SWITCHING  
performance switching. The part is particularly suitable  
for use in low noise audio amplifiers. The hermetically  
sealed TO-18 package is well suited for hi-reliability and  
harsh environment applications.  
rDS(on) ≤ 12Ω  
t(on) ≤ 4ns  
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  
Maximum Temperatures  
(See Packaging Information).  
Storage Temperature  
‐55°C to +150°C  
‐55°C to +150°C  
LSJ109 Benefits:  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
ƒ
ƒ
ƒ
Low On Resistance  
Low insertion loss  
Low Noise  
350mW  
LSJ109 Applications:  
Gate Current (Note 1)  
50mA  
ƒ
ƒ
ƒ
Analog Switches  
Commutators  
Choppers  
MAXIMUM VOLTAGES  
Gate to Drain Voltage  
Gate to Source Voltage  
VGDS = ‐25V  
VGSS = ‐25V  
LSJ109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
VGS(F)  
IDSS  
IGSS  
IG  
ID(off)  
rDS(on)  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Forward Voltage  
Drain to Source Saturation Current (Note 2)  
Gate Reverse Current  
MIN  
‐25  
‐2  
‐‐  
40  
‐‐  
‐‐  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
0.7  
‐‐  
‐0.01  
‐0.01  
0.02  
‐‐  
MAX  
‐‐  
‐6  
‐‐  
‐‐  
‐3  
‐‐  
UNITS  
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 5V, ID = 1µA  
IG = 1mA, VDS = 0V  
VDS = 15V, VGS = 0V  
VGS = ‐15V, VDS = 0V  
VDG = 10V, ID = 10mA  
VDS = 5V, VGS = ‐10V  
VGS = 0V, VDS ≤ 0.1V  
V
mA  
nA  
Gate Operating Current  
Drain Cutoff Current  
Drain to Source On Resistance  
3
12  
Ω
LSJ109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
gfs  
gos  
rDS(on)  
Ciss  
CHARACTERISTIC  
MIN  
‐‐  
TYP.  
17  
0.6  
‐‐  
60  
11  
3.5  
MAX  
‐‐  
UNITS  
mS  
CONDITIONS  
VDS = 5V, ID = 10mA , f = 1kHz  
Forward Transconductance  
Click To Buy  
Output Conductance  
Drain to Source On Resistance  
Input Capacitance  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
12  
85  
15  
‐‐  
Ω
VGS = 0V, ID = 0A, f = 1kHz  
VDS = 0V, VGS = 0V, f = 1MHz  
VDS = 0V, VGS = ‐10V, f = 1MHz  
VDS = 5V, ID = 10mA , f = 1kHz  
pF  
nV/√Hz  
Crss  
en  
Reverse Transfer Capacitance  
Equivalent Noise Voltage  
LSJ109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
UNITS  
CONDITIONS  
Turn On Time  
3
VDD = 1.5V  
VGS(H) = 0V  
Turn On Rise Time  
Turn Off Time  
1
ns  
td(off)  
tf  
4
See Switching Circuit  
Turn Off Fall Time  
18  
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ109 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%  
LSJ109 SWITCHING CIRCUIT PARAMETERS  
SWITCHING TEST CIRCUIT  
VGS(L)  
RL  
‐7V  
Available Packages:  
TO-18 (Bottom View)  
150Ω  
10mA  
LSJ109 in TO-18  
LSJ109 in bare die.  
ID(on)  
Micross Components Europe  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
1

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