Datasheet > LSDB3_11

LSDB3_11

更新时间： 2024-09-18 12:20:27

品牌	Logo	应用领域
美微科 - MCC		数据判读及分析中心
页数	文件大小	规格书
3页	451K
描述
SILICON BIDIRECTIONAL DIAC

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中文翻译

获取价格

数据手册

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LSDB3_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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LSDB3

Micro Commercial Components

Features

SILICON

BIDIRECTIONAL

DIAC

ꢀ

Breakover Voltage: 32V

ꢀ

Breakover Voltage Range: 28V to 36V

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

ꢀ

Lead Free Finish/RoHS Compliant(Note 3) ("P" Suffix designates

RoHS Compliant. See ordering information)

Maximum Ratings

ꢀ

Operating JunctionTemperature: -40^oC to +125^oC

Storage Temperature: -40^oC to +125^oC

Quadro MELF

ꢀ

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Power dissipation

on Printed

Circuit(l=10mm)

P_C

150mW

2.0A

T_A=50^oC

Repetitive Peak

on-state Current

I_TRM

=20us,f=120Hz

C=22nF(Note 2)

Min Typ Max

28 32 36V

Breakover Voltage

V_BO

DIMENSIONS

INCHES

MIN

.130

.008

.055

DIM

MAX

.146

.016

.063

MIN

3.30

.20

MAX

3.70

.40

NOTE

Breakover Voltage

Symmetry

1.40

1.60

∅

|+V_BO|

.067

1.70

SUGGESTED SOLDER

PAD LAYOUT

Output

Voltage(Note 1)

Breakover

V_o(min)

I_BO(max)

T_r

.155”

50uA

2.0us

10uA

C=22nF

Current(Note 1)

.065”

Rise Time(Note 1)

Leakage

Current(Note 1)

I_B(max)

V_B=0.5V_BO(max)

.022”

NOTES:1.Electrical characteristics applicable in both forward and

reverse directions.

2.Connected in parallel with the devices.

3.Lead in Glass Exemption Applied, see EU Directive Annex 5.

www.mccsemi.com

Revision: A

2011/05/12

1 of 3

12 3

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