Datasheet > LS3550

LS3550

更新时间： 2025-07-31 22:46:55

品牌	Logo	应用领域
Linear Systems		晶体晶体管
页数	文件大小	规格书
2页	278K
描述
MONOLITHIC DUAL PNP TRANSISTORS

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中文翻译

获取价格

数据手册

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LS3550 数据手册

LS3550 SERIES

MONOLITHIC DUAL

PNP TRANSISTORS

Linear Integrated Systems

FEATURES

6 LEAD SOT-23 SURFACE MOUNT PACKAGE*

TIGHT MATCHING¹

2mV

3µV/°C

TO-78

SOT-23

TOP VIEW

EXCELLENT THERMAL TRACKING¹

ABSOLUTE MAXIMUM RATINGS²

@ 25 °C (unless otherwise stated)

Maximum Temperatures

BOTTOM VIEW

Storage Temperature

-65 to +150 °C

-55 to +150 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

Collector Current

Maximum Voltages

TO-71

PDIP

SOIC

BOTTOM VIEW

TBD

50mA

80V

E2 E1

NC NC

Collector to Collector Voltage

MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

LS3250A

LS3250B

LS3250C

SYMBOL

CHARACTERISTIC

UNIT CONDITIONS

MIN MAX MIN MAX MIN MAX

BE1 − VBE2

Base to Emitter Voltage Differential

15 µV/°C

10 nA

I_C= -10mA, V_CE= -5V

BE1 − V^BE2

∆T

Base to Emitter Voltage Differential

Change with Temperature

I_C= -10mA, V_CE= -5V

T_A= -40°C to +85°C

B1 −IB2

Base Current Differential

0.5

I_C= -10µA, V_CE= -5V

B1 − I^B2

Base Current Differential

Change with Temperature

I_C= -10µA, V_CE= -5V

T_A= -40°C to +85°C

1.0 nA/°C

∆T

^FE1hFE2

Current Gain Differential

I_C= -10µA, V_CE= -5V

ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

LS3250A

LS3250B

LS3250C

SYMBOL

CHARACTERISTIC

UNIT CONDITIONS

MIN MAX MIN MAX MIN MAX

BV_CBO

BV_CEO

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage -45

-45

-40

-20

I_C= -10mA, I_E= 0A

I_C= -10µA, I_E= 0A

Collector to Collector Breakdown

BV_CCO

BV_EBO

-80

Voltage

Emitter to Base Breakdown Voltage³

Collector to Emitter Saturation Voltage

-6.2

I_E= -10µA, I_C= 0A

I_C= -100mA

I_B= -10mA

V_CE(SAT)

-0.25

-1.2

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

中文翻译

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