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LP3891EMR-1.2 PDF预览

LP3891EMR-1.2

更新时间: 2024-02-28 06:54:10
品牌 Logo 应用领域
美国国家半导体 - NSC 光电二极管输出元件调节器
页数 文件大小 规格书
11页 728K
描述
IC VREG 1.216 V FIXED POSITIVE LDO REGULATOR, 0.43 V DROPOUT, PDSO8, MOLDED, PSOP-8, Fixed Positive Single Output LDO Regulator

LP3891EMR-1.2 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HLSOP, SOP8,.25Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.28可调性:FIXED
最大回动电压 1:0.43 V标称回动电压 1:0.115 V
最大绝对输入电压:6 V最大输入电压:5.5 V
最小输入电压:1.646 VJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.93 mm
湿度敏感等级:3功能数量:1
输出次数:1端子数量:8
工作温度TJ-Max:125 °C工作温度TJ-Min:-40 °C
最大输出电流 1:0.8 A最大输出电压 1:1.246 V
最小输出电压 1:1.186 V标称输出电压 1:1.216 V
封装主体材料:PLASTIC/EPOXY封装代码:HLSOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE包装方法:RAIL
峰值回流温度(摄氏度):260认证状态:Not Qualified
调节器类型:FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR座面最大高度:1.68 mm
子类别:Other Regulators表面贴装:YES
技术:CMOS端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:2.5%宽度:3.94 mm

LP3891EMR-1.2 数据手册

 浏览型号LP3891EMR-1.2的Datasheet PDF文件第2页浏览型号LP3891EMR-1.2的Datasheet PDF文件第3页浏览型号LP3891EMR-1.2的Datasheet PDF文件第4页浏览型号LP3891EMR-1.2的Datasheet PDF文件第5页浏览型号LP3891EMR-1.2的Datasheet PDF文件第6页浏览型号LP3891EMR-1.2的Datasheet PDF文件第7页 
June 2006  
LP3891  
0.8A Fast-Response Ultra Low Dropout Linear  
Regulators  
General Description  
Features  
@
n Ultra low dropout voltage (100mV 0.8A typ)  
The LP3891 is a high current, fast response regulator which  
can maintain output voltage regulation with minimum input to  
output voltage drop. Fabricated on a CMOS process, the  
device operates from two input voltages: Vbias provides  
voltage to drive the gate of the N-MOS power transistor,  
while Vin is the input voltage which supplies power to the  
load. The use of an external bias rail allows the part to  
operate from ultra low Vin voltages. Unlike bipolar regula-  
tors, the CMOS architectutre consumes extremely low qui-  
escent current at any output load current. The use of an  
n Low ground pin current  
n Load regulation of 0.04%/A  
n 60 nA typical quiescent current in shutdown  
n 1.5% output accuracy (25˚C)  
n TO-220, TO-263 and PSOP-8 packages  
n Over temperature/over current protection  
n −40˚C to +125˚C junction temperature range  
N-MOS power transistor results in wide bandwidth, yet mini- Applications  
mum external capacitance is required to maintain loop sta-  
bility.  
n DSP Power Supplies  
n Server Core and I/O Supplies  
n PC Add-in-Cards  
n Local Regulators in Set-Top Boxes  
n Microcontroller Power Supplies  
n High Efficiency Power Supplies  
n SMPS Post-Regulators  
The fast transient response of these devices makes them  
suitable for use in powering DSP, Microcontroller Core volt-  
ages and Switch Mode Power Supply post regulators. The  
parts are available in TO-220, TO-263 and PSOP-8 pack-  
ages.  
@
Dropout Voltage: 100 mV (typ) 0.8A load current.  
Ground Pin Current: 3 mA (typ) at full load.  
Shutdown Current: 60 nA (typ) when S/D pin is low.  
Precision Output Voltage: 1.5% room temperature accu-  
racy.  
Typical Application Circuit  
20069501  
At least 10 µF of input and output capacitance is required for stability.  
*Tantalum capacitors are recommended. Aluminum electrolytic capacitors may be used for restricted temperature range. See application hints.  
© 2006 National Semiconductor Corporation  
DS200695  
www.national.com  

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