Datasheet > LP2301ALT1G

LP2301ALT1G

更新时间： 2024-02-25 01:00:50

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	558K
描述
20V P-Channel Enhancement-Mode MOSFET

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LP2301ALT1G 数据手册

LP2301ALT1G, S-LP2301ALT1G

20V P-Channel Enhancement-Mode MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

OFF CHARACTERISTICS

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Vdc

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μAdc)

VBRDSS

IDSS

-20

μAdc

nAdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -20 Vdc)

-1

Gate–Body Leakage Current, Forward

(VGS = 8 Vdc)

IGSSF

IGSSR

100

-100

Gate–Body Leakage Current, Reverse

(VGS = - 8 Vdc)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Vdc

VGS(th)

RDS(on)

(VDS = VGS, ID = -250μAdc)

Static Drain–Source On–State Resistance

(VGS = -4.5 Vdc, ID = -2.8 Adc)

(VGS = -2.5 Vdc, ID = -2 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

-0.4

-0.6

mΩ

110

150

110

Ciss

Coss

Crss

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Output Capacitance

480

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(on)

Rise Time

(VDS=-6V, RL =6Ω,

RGEN=6Ω ,VGS=-4.5V )

Turn-Off Delay Time

Fall Time

td(off)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward Voltage

VSD

(VGS = 0 Vdc, ISD = -1 Adc)

-0.7

-1.4

2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

Leshan Radio Company, LTD.

Rev.C Sep. 2018

2/5

123 4 5

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