Datasheet > LP2309LT1G

LP2309LT1G

更新时间： 2024-01-25 16:41:25

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	703K
描述
P-Channel 60V (D-S) MOSFET

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LP2309LT1G 数据手册

LP2309LT1G

P-Channel 60V (D-S) MOSFET

1. FEATURES

●

RDS(ON)≤215m , Vgs@-10V.

●

RDS(ON)≤260m , Vgs@-4.5V.

●

Super high density cell design for extremely low RDS(ON).

●

Exceptional on-resistance and maximum DC current capability.

SOT23(TO-236)

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

2. APPLICATIONS

●

Power Management in Note book

●

Portable Equipment

●

Battery Powered System

●

DC/DC Converter

●

Load Switch

●

DSC

●

LCD Display inverter

3. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LP2309LT1G

LP2309LT3G

P09

3000/Tape&Reel

10000/Tape&Reel

P09

4. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Limits

-60

Symbol

Unit

Drain–Source Voltage

VDSS

VGS

Gate–to–Source Voltage – Continuous

±20

-1.9

Ta=25℃

Ta=70℃

Continuous Drain Current

Pulsed Drain Current

IDM

-1.5

-7.6

1.4

Ta=25℃

Ta=70℃

Maximum Power Dissipation

0.9

150

Junction Temperature

℃

Tstg

-55~+150

Storage Temperature Range

170

225

t≤10s

Steady State

Thermal Resistance-Junction to Ambient(Note 1)

RθJA

℃/W

RθJC

Thermal Resistance-Junction to Case(Note 1)

1.The device mounted on 1in ² FR4 board with 2 oz copper

Leshan Radio Company, LTD.

Rev.D Oct. 2018

1/5

12 3 4 5

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