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LP2305DSLT3G PDF预览

LP2305DSLT3G

更新时间: 2024-11-28 01:23:27
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 510K
描述
12V P-Channel Enhancement-Mode MOSFET

LP2305DSLT3G 数据手册

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LESHAN RADIO COMPANY, LTD.  
12V P-Channel Enhancement-Mode MOSFET  
LP2305DSLT1G  
S-LP2305DSLT1G  
VDS= -12V  
RDS(ON), Vgs@-4.5V, Ids@ 3.5A = 68  
"
mΩ  
mΩ  
DS(ON), Vgs@-2.5V, Ids@ 3A = 81  
"
R
"
RDS(ON),  
2A = 118 mΩ  
Vgs@-1.8V, Ids@  
3
Features  
1
Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
Fully Characterized Avalanche Voltage and Current  
2
SOT– 23 (TO–236AB)  
Improved Shoot-Through FOM  
we declare that the material of product  
compliance with RoHS re uirements.  
3
q
D
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
G
1
S
2
Simple Drive Requirement  
Small Package Outline  
Surface Mount Device  
Ordering Information  
Device  
Marking  
P5S  
Shipping  
LP2305DSLT1G  
S-LP2305DSLT1G  
3000/Tape&Reel  
LP2305DSLT3G  
S-LP2305DSLT3G  
10000/Tape&Reel  
P5S  
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
- 12  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
V
VGS  
± 8  
ID  
-4  
A
Pulsed Drain Current 1)  
IDM  
-12  
oC  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
-55 to 150  
Total Device Dissipation FR–5 Board TA = 25°C  
PD  
1100  
mW  
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature  
Thermal Data  
Symbol  
Rthj-a  
Parameter  
Thermal Resistance Junction-ambient3  
Value  
110  
Unit  
/W  
Rev .B 1/5  

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