Datasheet > LP2307LT3G

LP2307LT3G

更新时间： 2024-02-12 17:59:53

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	377K
描述
16V P-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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LP2307LT3G 数据手册

LESHAN RADIO COMPANY, LTD.

16V P-Channel Enhancement-Mode MOSFET

LP2307LT1G

S-LP2307LT1G

V^DS= -16V

mΩ

R_DS(ON),Vgs@-4.5V, Ids@-4.7A = 70

mΩ

_DS(ON),Vgs@-2.5V, Ids@-1.0A = 110

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

SOT– 23 (TO–236AB)

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Marking

P07

Shipping

LP2307LT1G

S-LP2307LT1G

3000/Tape&Reel

LP2307LT3G

S-LP2307LT3G

10000/Tape&Reel

P07

Absolute Maximum Ratings

Symbol

Parameter

Rating

-16

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

I_D@T_A=25℃

I_D@T_A=70℃

Continuous Drain Current³

Pulsed Drain Current¹

-4.7

-3.3

I_DM

-20

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation

1.1

℃

Total Power Dissipation

0.7

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient³

Value

110

Unit

℃/W

Rev .O 1/4

12 3 4

中文翻译

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