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Low Capacitance Devices (39k)

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SI96-07

Surging Ideas

TVS Diode Application Note

PROTECTION PRODUCTS

Low Capacitance Devices

The junction capacitance of a TVS diode is naturally

large. In high speed data transmission applications,

the extra capacitance introduced by protection devices

needs to be kept to a minimum.

Low capacitance devices are (Figure 1) are manufac-

tured by placing a low capacitance rectifier diode (D₁) in

series but opposite in polarity with the TVS diode (D₂).

This has the effect of adding another capacitor (C₁) in

series with the junction capacitor of the TVS diode (C₂).

Taking advantage of the relationship for series capaci-

tors (C_T= C₁* C₂/C₁+ C₂) means the resulting capaci-

tance will be less than the smallest component in

series. By carefully choosing the rectifier, the effective

capacitance may be reduced by approximately two

orders of magnitude.

Figure 1

Using Low Capacitance Parts

For bidirectional applications, a TVS/rectifier pair is

connected in an anti-parallel configuration across the

line (Figure 2). In this configuration, D₁& D₂will con-

duct positive surges while D₃& D₄will conduct negative

surges. In unidirectional applications, designers need

to take into consideration the following:

In Figure 3a, if a positive surge occurs on the line, D₁

will conduct in the forward direction and the TVS D₂will

avalanche and i₁will flow through the device. If a

negative spike occurs however, surge current i₂flows,

forward biasing D₂while D₁is subject to the full surge

in the reverse bias direction. The power handling

capability of D₁will be exceeded resulting in heating

and destruction of the device. Adding an additional

diode D₃in parallel (Figure 3b), ensures D₁will not be

reversed biased under transient conditions. D₃will

conduct i₂under this condition, thus preventing failure.

Semtech has introduced devices for unidirectional

applications which incorporate D₃as an integrated

part.

Figure 2

Figure 3

www.semtech.com

Revision 9/2000

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