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LMV116MF/NOPB

更新时间： 2024-02-24 05:38:14
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
13页 413K
描述
IC OP-AMP, 5000 uV OFFSET-MAX, PDSO5, SOT-23, 5-PIN, Operational Amplifier

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LMV116MF/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT-23
包装说明：SOT-23, 5-PIN针数：5
Reach Compliance Code：unknown风险等级：5.37
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：2 µA
标称共模抑制比：104 dB最大输入失调电压：5000 µV
JESD-30 代码：R-PDSO-G5JESD-609代码：e3
长度：2.92 mm湿度敏感等级：1
负供电电压上限：-6.3 V标称负供电电压 (Vsup)：-5 V
功能数量：1端子数量：5
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260座面最大高度：1.22 mm
标称压摆率：35 V/us子类别：Operational Amplifier
供电电压上限：6.3 V标称供电电压 (Vsup)：5 V
表面贴装：YES温度等级：INDUSTRIAL
端子面层：TIN端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：1.6 mm
Base Number Matches：1

LMV116MF/NOPB 数据手册

 浏览型号LMV116MF/NOPB的Datasheet PDF文件第6页浏览型号LMV116MF/NOPB的Datasheet PDF文件第7页浏览型号LMV116MF/NOPB的Datasheet PDF文件第8页浏览型号LMV116MF/NOPB的Datasheet PDF文件第10页浏览型号LMV116MF/NOPB的Datasheet PDF文件第11页浏览型号LMV116MF/NOPB的Datasheet PDF文件第12页 
Typical Performance Characteristics At TJ = 25˚C. Unless otherwise specified. (Continued)  
Souce Current vs. VOUT  
20080711  
Application Notes  
CIRCUIT DESCRIPTION  
The LMV116 and LMV118 are based on National Semicon-  
ductor’s proprietary VIP10 dielectrically isolated bipolar pro-  
cess.  
The LMV116 and LMV118 architecture features the follow-  
ing:  
•
Complimentary bipolar devices with exceptionally high ft  
(∼8GHz) even under low supply voltage (2.7V) and low  
Collector bias current.  
•
Common Emitter push-pull output stage capable of 20mA  
output current (at 0.5V from the supply rails) while con-  
suming only 600µA of total supply current. This architec-  
ture allows output to reach within milli-volts of either  
supply rail at light loads.  
20080756  
FIGURE 1. LMV118 Equivalent Input in Shutdown Mode  
•
Consistent performance from any supply voltage (2.7V-  
10V) with little variation with supply voltage for the most  
important specifications (e.g. BW, SR, IOUT, etc.)  
As can be seen above, in shutdown, there may be current  
flow through the internal diodes shown, caused by input  
potential, if present. This current may flow through the exter-  
nal feedback resistor and result in an apparent output signal.  
In most shutdown applications the presence of this output is  
inconsequential. However, if the output is “forced” by another  
device such as in a multiplexer, the other device will need to  
conduct the current described in order to maintain the output  
potential.  
MICRO-POWER SHUTDOWN  
The LMV118 can be shutdown to save power and reduce its  
supply current to less than 50µA guaranteed, by applying a  
voltage to the SD pin. The SD pin is “active high” and needs  
to be tied to V− for normal operation. This input is low current  
−
<
(
20µA, 4pF equivalent capacitance) and a resistor to V  
(≤20kΩ) will result in normal operation. Shutdown is guaran-  
teed when SD pin is 0.4V or less from V+ at any operating  
supply voltage and temperature.  
To keep the output at or near ground during shutdown when  
there is no other device to hold the output low, a switch  
(transistor) could be used to shunt the output to ground.  
Figure 2 shows a circuit where a NPN bipolar is used to keep  
the output near ground (∼80mV):  
In the shutdown mode, essentially all internal device biasing  
is turned off in order to minimize supply current flow and the  
output goes into Hi-Z (high impedance) mode. Complete  
device Turn-on and Turn-off times vary considerably relative  
to the output loading conditions, output voltage, and input  
impedance, but is generally limited to less than 1µs (see  
tables for actual data).  
During shutdown, the input stage has an equivalent circuit as  
shown below in Figure 1  
9
www.national.com  
1...678910111213

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