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LMV2011

更新时间： 2024-11-04 12:02:15
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
24页 1272K
描述
LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier

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LMV2011  
www.ti.com  
SNOSA32C –AUGUST 2003–REVISED MARCH 2013  
LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier  
Check for Samples: LMV2011  
1
FEATURES  
DESCRIPTION  
The LMV2011 is a new precision amplifier that offers  
unprecedented accuracy and stability at an affordable  
price and is offered in a miniature (5-pin SOT-23)  
package and in an 8-lead SOIC package. This device  
utilizes patented techniques to measure and  
continually correct the input offset error voltage. The  
result is an amplifier which is ultra stable over time  
and temperature. It has excellent CMRR and PSRR  
ratings, and does not exhibit the familiar 1/f voltage  
and current noise increase that plagues traditional  
amplifiers. The combination of the LMV2011  
characteristics makes it a good choice for transducer  
amplifiers, high gain configurations, ADC buffer  
amplifiers, DAC I-V conversion, and any other 2.7V-  
5V application requiring precision and long term  
stability.  
2
•
•
•
•
•
•
•
•
•
•
•
(For Vs = 5V, Typical Unless Otherwise Noted)  
Low Ensured Vos Over Temperature 35µV  
Low Noise with no 1/f 35nV/√Hz  
High CMRR 130dB  
High PSRR 120dB  
High AVOL 130dB  
Wide Gain-Bandwidth Product 3MHz  
High Slew Rate 4V/µs  
Low Supply Current 930µA  
Rail-to-Rail Output 30mV  
No External Capacitors Required  
APPLICATIONS  
Other useful benefits of the LMV2011 are rail-to-rail  
output, a low supply current of 930µA, and wide gain-  
bandwidth product of 3MHz. These extremely  
versatile features found in the LMV2011 provide high  
performance and ease of use.  
•
•
•
Precision Instrumentation Amplifiers  
Thermocouple Amplifiers  
Strain Gauge Bridge Amplifier  
Connection Diagrams  
1
8
N/C  
N/C  
2
3
4
-
7
6
5
+
-
V
V
IN  
+
V
IN  
V
OUT  
+
-
N/C  
V
Figure 1. 5-Pin SOT-23 (Top View)  
See DBV Package  
Figure 2. 8-Pin SOIC (Top View)  
See D Package  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2013, Texas Instruments Incorporated  
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LMV2011 替代型号

型号 品牌 替代类型 描述 数据表
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