是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | LLP-10 |
针数: | 10 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.26 | 高边驱动器: | YES |
输入特性: | SCHMITT TRIGGER | 接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码: | S-PDSO-N10 | 长度: | 4 mm |
功能数量: | 1 | 端子数量: | 10 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
输出极性: | TRUE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HVSON | 封装等效代码: | SOLCC10,.16,32 |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 0.8 mm | 最大压摆率: | 0.1 mA |
最大供电电压: | 5.5 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 表面贴装: | YES |
温度等级: | AUTOMOTIVE | 端子形式: | NO LEAD |
端子节距: | 0.8 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.045 µs |
接通时间: | 0.045 µs | 宽度: | 4 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LM5113SD/NOPB | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113SDE | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113SDE/NOPB | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113SDX | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113SDX/NOPB | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113TME | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113TME/NOPB | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113TMX | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5113TMX/NOPB | TI |
获取价格 |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs | |
LM5114 | TI |
获取价格 |
Single 7.6A Peak Current Low-Side Gate Driver |