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LM5113TMX

更新时间： 2024-11-16 12:09:47
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极栅极驱动
页数 文件大小 规格书
24页 2435K
描述
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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LM5113TMX 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.68
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERBase Number Matches：1

LM5113TMX 数据手册

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LM5113  
www.ti.com  
SNVS725E –JUNE 2011–REVISED JANUARY 2012  
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs  
Check for Samples: LM5113  
1
FEATURES  
•
Excellent propagation delay matching (1.5ns  
typical)  
2
•
Independent high-side and low-side TTL logic  
inputs  
•
•
Supply rail under-voltage lockout  
Low power consumption  
•
•
1.2A/5A peak source/sink current  
High-side floating bias voltage rail operates up  
to 100VDC  
TYPICAL APPLICATIONS  
•
•
•
•
•
Current Fed Push-Pull converters  
Half and Full-Bridge converters  
Synchronous Buck converters  
Two-switch Forward converters  
Forward with Active Clamp converters  
•
•
Internal bootstrap supply voltage clamping  
Split outputs for adjustable turn-on/turn-off  
strength  
•
•
0.6Ω /2.1Ω pull-down/pull-up resistance  
Fast propagation times (28ns typical)  
DESCRIPTION  
The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN)  
FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a  
high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a  
bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the  
maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic  
compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split  
gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.  
In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended  
turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard  
LLP-10 pin package and a 12-bump micro SMD package. The LLP-10 pin package contains an exposed pad to  
aid power dissipation. The micro SMD package offers a compact footprint and minimized package inductance.  
Packages  
•
•
LLP-10 (4 mm x 4 mm)  
micro SMD (2 mm x 2 mm)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011–2012, Texas Instruments Incorporated  
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LM5114AMF TI

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LM5114AMFX/NOPB TI

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 		具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 | DBV |
LM5114AMFX/S7003103 TI

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 		具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 | DBV |
LM5114ASD TI

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 		Single 7.6A Peak Current Low-Side Gate Driver
LM5114ASD/NOPB TI

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 		具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 | NGG |

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