Datasheet > LM5113TMX

LM5113TMX

更新时间： 2025-07-16 12:09:47

品牌	Logo	应用领域
德州仪器 - TI		驱动器栅极栅极驱动
页数	文件大小	规格书
24页	2435K
描述
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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LM5113TMX 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER	Base Number Matches：	1

LM5113TMX 数据手册

LM5113

www.ti.com

SNVS725E –JUNE 2011–REVISED JANUARY 2012

LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

Check for Samples: LM5113

FEATURES

•

Excellent propagation delay matching (1.5ns

typical)

•

Independent high-side and low-side TTL logic

inputs

•

Supply rail under-voltage lockout

Low power consumption

•

1.2A/5A peak source/sink current

High-side floating bias voltage rail operates up

to 100VDC

TYPICAL APPLICATIONS

•

Current Fed Push-Pull converters

Half and Full-Bridge converters

Synchronous Buck converters

Two-switch Forward converters

Forward with Active Clamp converters

•

Internal bootstrap supply voltage clamping

Split outputs for adjustable turn-on/turn-off

strength

•

0.6Ω /2.1Ω pull-down/pull-up resistance

Fast propagation times (28ns typical)

DESCRIPTION

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN)

FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a

high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a

bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the

maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic

compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split

gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended

turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard

LLP-10 pin package and a 12-bump micro SMD package. The LLP-10 pin package contains an exposed pad to

aid power dissipation. The micro SMD package offers a compact footprint and minimized package inductance.

Packages

•

LLP-10 (4 mm x 4 mm)

micro SMD (2 mm x 2 mm)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...24

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与LM5113TMX相关器件

型号	品牌	获取价格	描述	数据表
LM5113TMX/NOPB	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113_1211	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113_14	TI	获取价格	5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5114	TI	获取价格	Single 7.6A Peak Current Low-Side Gate Driver
LM5114AMF	TI	获取价格	Single 7.6A Peak Current Low-Side Gate Driver
LM5114AMF/NOPB	TI	获取价格	7.6-A/1.3-A single channel gate driver with 4-V UVLO and split outputs 6-SOT-23 -40 to 125
LM5114AMF/S7003109	TI	获取价格	具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 \| DBV \|
LM5114AMFX	TI	获取价格	Single 7.6A Peak Current Low-Side Gate Driver
LM5114AMFX/NOPB	TI	获取价格	具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 \| DBV \|
LM5114AMFX/S7003103	TI	获取价格	具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 \| DBV \|

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