LM5114
Single 7.6A Peak Current Low-Side Gate Driver
General Description
Features
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The LM5114 is designed to drive low-side MOSFETs in boost
type configurations or to drive secondary synchronous MOS-
FETs in isolated topologies. With strong sink current capabil-
ity, the LM5114 can drive multiple FETs in parallel. The
LM5114 also has the features necessary to drive low-side en-
hancement mode Gallium Nitride (GaN) FETs. The LM5114
provides inverting and non-inverting inputs to satisfy require-
ments for inverting and non-inverting gate drive in a single
device type. The inputs of the LM5114 are TTL/CMOS Logic
compatible and withstand the input voltages up to 14V re-
gardless of the VDD voltage. The LM5114 has split gate
outputs, providing flexibility to adjust the turn-on and turn-off
strength independently. The LM5114 has fast switching
speed and minimized propagation delays, facilitating high-
frequency operation. The LM5114 is available in SOT-23 6-
pin package and LLP-6 package with an exposed pad to aid
thermal dissipation.
Independent source and sink outputs for controllable rise
and fall times
+4V to +12.6V single power supply
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7.6A/1.3A peak sink/source drive current
0.23Ω open-drain pull-down sink output
2Ω open-drain pull-up source output
12ns (typical) propagation delay
Matching delay time between inverting and non-inverting
inputs
TTL/CMOS logic Inputs
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0.68V input hysteresis
Up to +14V logic inputs (Regardless of VDD voltage)
Low input capacitance: 2.5pF (typical)
-40°C to +125°C operating temperature range
Pin-to-Pin compatible with MAX5048
Typical Applications
Package
Boost converters
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SOT-23-6
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Flyback and forward converters
LLP-6 (3mm x 3mm)
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Secondary synchronous FETs drive in isolated topologies
Motor control
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Block Diagram
30180403
FIGURE 1.
PRODUCTION DATA information is current as of
publication date. Products conform to specifications per
the terms of the Texas Instruments standard warranty.
Production processing does not necessarily include
testing of all parameters.
301804 SNVS790D
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