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LM5113SDE PDF预览

LM5113SDE

更新时间： 2024-09-29 12:09:47
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德州仪器 - TI 驱动器栅极栅极驱动
页数 文件大小 规格书
24页 2435K
描述
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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LM5113SDE 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：LLP-10
针数：10Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.26高边驱动器：YES
输入特性：SCHMITT TRIGGER接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：S-PDSO-N10长度：4 mm
功能数量：1端子数量：10
最高工作温度：125 °C最低工作温度：-40 °C
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC10,.16,32
封装形状：SQUARE封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
认证状态：Not Qualified座面最大高度：0.8 mm
最大压摆率：0.1 mA最大供电电压：5.5 V
最小供电电压：4.5 V标称供电电压：5 V
表面贴装：YES温度等级：AUTOMOTIVE
端子形式：NO LEAD端子节距：0.8 mm
端子位置：DUAL断开时间：0.045 µs
接通时间：0.045 µs宽度：4 mm
Base Number Matches：1

LM5113SDE 数据手册

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LM5113  
www.ti.com  
SNVS725E –JUNE 2011–REVISED JANUARY 2012  
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs  
Check for Samples: LM5113  
1
FEATURES  
•
Excellent propagation delay matching (1.5ns  
typical)  
2
•
Independent high-side and low-side TTL logic  
inputs  
•
•
Supply rail under-voltage lockout  
Low power consumption  
•
•
1.2A/5A peak source/sink current  
High-side floating bias voltage rail operates up  
to 100VDC  
TYPICAL APPLICATIONS  
•
•
•
•
•
Current Fed Push-Pull converters  
Half and Full-Bridge converters  
Synchronous Buck converters  
Two-switch Forward converters  
Forward with Active Clamp converters  
•
•
Internal bootstrap supply voltage clamping  
Split outputs for adjustable turn-on/turn-off  
strength  
•
•
0.6Ω /2.1Ω pull-down/pull-up resistance  
Fast propagation times (28ns typical)  
DESCRIPTION  
The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN)  
FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a  
high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a  
bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the  
maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic  
compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split  
gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.  
In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended  
turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard  
LLP-10 pin package and a 12-bump micro SMD package. The LLP-10 pin package contains an exposed pad to  
aid power dissipation. The micro SMD package offers a compact footprint and minimized package inductance.  
Packages  
•
•
LLP-10 (4 mm x 4 mm)  
micro SMD (2 mm x 2 mm)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011–2012, Texas Instruments Incorporated  
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LM5113SDE 替代型号

型号 品牌 替代类型 描述 数据表
LM5113TME/NOPB TI

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