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LM5100ASD/NOPB PDF预览

LM5100ASD/NOPB

更新时间： 2024-11-24 20:05:03
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 348K
描述
IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, 4 X 4 MM, LLP-10, MOSFET Driver

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中文翻译

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LM5100ASD/NOPB 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HVSON, SOLCC10,.16,32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.2Is Samacsys：N
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：S-PDSO-N8JESD-609代码：e3
长度：4 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
标称输出峰值电流：3 A封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC10,.16,32
封装形状：SQUARE封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260电源：12 V
认证状态：Not Qualified座面最大高度：0.8 mm
子类别：MOSFET Drivers最大供电电压：14 V
最小供电电压：9 V标称供电电压：12 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40断开时间：45 µs
接通时间：45 µs宽度：4 mm
Base Number Matches：1

LM5100ASD/NOPB 数据手册

 浏览型号LM5100ASD/NOPB的Datasheet PDF文件第2页浏览型号LM5100ASD/NOPB的Datasheet PDF文件第3页浏览型号LM5100ASD/NOPB的Datasheet PDF文件第4页浏览型号LM5100ASD/NOPB的Datasheet PDF文件第5页浏览型号LM5100ASD/NOPB的Datasheet PDF文件第6页浏览型号LM5100ASD/NOPB的Datasheet PDF文件第7页 
June 9, 2009  
LM5100A/B/C  
LM5101A/B/C  
3A, 2A and 1A High Voltage High-Side and Low-Side Gate  
Drivers  
General Description  
Features  
The LM5100A/B/C and LM5101A/B/C High Voltage Gate  
Drivers are designed to drive both the high-side and the low-  
side N-Channel MOSFETs in a synchronous buck or a half-  
bridge configuration. The floating high-side driver is capable  
of operating with supply voltages up to 100V. The “A” versions  
provide a full 3A of gate drive while the “B” and “C” versions  
provide 2A and 1A respectively. The outputs are indepen-  
dently controlled with CMOS input thresholds (LM5100A/B/C)  
or TTL input thresholds (LM5101A/B/C). An integrated high  
voltage diode is provided to charge the high-side gate drive  
bootstrap capacitor. A robust level shifter operates at high  
speed while consuming low power and providing clean level  
transitions from the control logic to the high-side gate driver.  
Under-voltage lockout is provided on both the low-side and  
the high-side power rails. These devices are available in the  
standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin pack-  
ages. The LM5100C and LM5101C are also available in  
eMSOP-8 package.  
Drives both a high-side and low-side N-Channel  
■
MOSFETs  
Independent high and low driver logic inputs  
■
■
■
■
■
■
■
■
Bootstrap supply voltage up to 118V DC  
Fast propagation times (25 ns typical)  
Drives 1000 pF load with 8 ns rise and fall times  
Excellent propagation delay matching (3 ns typical)  
Supply rail under-voltage lockout  
Low power consumption  
Pin compatible with HIP2100/HIP2101  
Typical Applications  
Current Fed push-pull converters  
■
■
■
■
Half and Full Bridge power converters  
Synchronous buck converters  
Two switch forward power converters  
Forward with Active Clamp converters  
■
Package  
SOIC-8  
■
■
■
■
PSOP-8  
LLP-10 (4 mm x 4 mm)  
eMSOP-8 (LM5100/01C)  
Simplified Block Diagram  
20203103  
FIGURE 1.  
© 2009 National Semiconductor Corporation  
202031  
www.national.com  
1234567...16

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