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LM5050MK-2/NOPB PDF预览

LM5050MK-2/NOPB

更新时间: 2024-11-29 12:05:15
品牌 Logo 应用领域
德州仪器 - TI 控制器
页数 文件大小 规格书
22页 1010K
描述
LM5050-2 High Side OR-ing FET Controller

LM5050MK-2/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP, TSOP6,.11,37
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.19高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2.9 mm
湿度敏感等级:1功能数量:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSOP6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.1 mm
子类别:MOSFET Drivers最大压摆率:0.46 mA
最大供电电压:75 V最小供电电压:6 V
标称供电电压:12 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mmBase Number Matches:1

LM5050MK-2/NOPB 数据手册

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LM5050-2  
www.ti.com  
SNVS679B NOVEMBER 2010REVISED MARCH 2013  
LM5050-2 High Side OR-ing FET Controller  
Check for Samples: LM5050-2  
1
FEATURES  
DESCRIPTION  
The LM5050-2 High Side OR-ing FET Controller  
operates in conjunction with an external MOSFET as  
an ideal diode rectifier when connected in series with  
2
Wide Operating Input Voltage Range: +6V to  
+75V  
+100 Volt Transient Capability  
a
power source. This OR-ing controller allows  
Charge Pump Gate Driver for External N-  
Channel MOSFET  
MOSFETs to replace diode rectifiers in power  
distribution networks thus reducing both power loss  
and voltage drops.  
MOSFET Diagnostic Test Mode  
The LM5050-2 controller provides charge pump gate  
drive for an external N-Channel MOSFET and a fast  
response comparator to turn off the FET when  
current flows in the reverse direction. The LM5050-2  
can connect power supplies ranging from +6V to  
+75V and can withstand transients up to +100V.  
Fast 50ns Response to Current Reversal  
2A Peak Gate Turn-off Current  
Minimum VDS Clamp for Faster Turn-off  
Package: SOT-6 (Thin SOT23-6)  
APPLICATIONS  
The LM5050-2 also provides a FET test diagnostic  
mode which allows the system controller to test for  
shorted MOSFETs.  
Active OR-ing of Redundant (N+1) Power  
Supplies  
Typical Application Circuits  
+6V to +75V  
V
V
OUT  
IN  
V
LOGIC  
R
PULL-UP  
IN  
GATE  
LM5050-2  
GND  
OUT  
Low= OK, High= Fault  
Status  
Shutdown  
GND  
nFGD  
Low= FET On, High= FET Off  
OFF  
GND  
Figure 1. Full Application with MOSFET Diagnostic  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010–2013, Texas Instruments Incorporated  

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