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LM394H/NOPB PDF预览

LM394H/NOPB

更新时间： 2024-11-24 05:40:19
品牌 Logo 应用领域
德州仪器 - TI 放大器晶体管
页数 文件大小 规格书
14页 278K
描述
TRANSISTOR 20 mA, 35 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, METAL CAN-6, BIP General Purpose Small Signal

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中文翻译

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LM394H/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：CYLINDRICAL, O-MBCY-W6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.83其他特性：LOW NOISE
外壳连接：ISOLATED最大集电极电流 (IC)：0.02 A
集电极-发射极最大电压：35 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：300JESD-30 代码：O-MBCY-W6
JESD-609代码：e4湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：85 °C封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Nickel/Gold (Ni/Au)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

LM394H/NOPB 数据手册

 浏览型号LM394H/NOPB的Datasheet PDF文件第2页浏览型号LM394H/NOPB的Datasheet PDF文件第3页浏览型号LM394H/NOPB的Datasheet PDF文件第4页浏览型号LM394H/NOPB的Datasheet PDF文件第5页浏览型号LM394H/NOPB的Datasheet PDF文件第6页浏览型号LM394H/NOPB的Datasheet PDF文件第7页 
December 1994  
LM194/LM394 Supermatch Pair  
General Description  
The LM194 and LM394 are junction isolated ultra well-  
matched monolithic NPN transistor pairs with an order of  
magnitude improvement in matching over conventional tran-  
sistor pairs. This was accomplished by advanced linear pro-  
cessing and a unique new device structure.  
matched transistor pair. In many cases, trimming can be  
eliminated entirely, improving reliability and decreasing  
costs. Additionally, the low noise and high gain make this  
device attractive even where matching is not critical.  
The LM194 and LM394/LM394B/LM394C are available in  
an isolated header 6-lead TO-5 metal can package. The  
LM394/LM394B/LM394C are available in an 8-pin plastic  
dual-in-line package. The LM194 is identical to the LM394  
except for tighter electrical specifications and wider temper-  
ature range.  
Electrical characteristics of these devices such as drift ver-  
sus initial offset voltage, noise, and the exponential relation-  
ship of base-emitter voltage to collector current closely ap-  
proach those of a theoretical transistor. Extrinsic emitter  
and base resistances are much lower than presently avail-  
able pairs, either monolithic or discrete, giving extremely low  
noise and theoretical operation over a wide current range.  
Most parameters are guaranteed over a current range of  
1 mA to 1 mA and 0V up to 40V collector-base voltage,  
ensuring superior performance in nearly all applications.  
Features  
Y
Emitter-base voltage matched to 50 mV  
Y
Offset voltage drift less than 0.1 mV/ C  
§
Y
Current gain (h ) matched to 2%  
FE  
To guarantee long term stability of matching parameters,  
internal clamp diodes have been added across the emitter-  
base junction of each transistor. These prevent degradation  
due to reverse biased emitter currentÐthe most common  
cause of field failures in matched devices. The parasitic iso-  
lation junction formed by the diodes also clamps the sub-  
strate region to the most negative emitter to ensure com-  
plete isolation between devices.  
Y
Y
Common-mode rejection ratio greater than 120 dB  
Parameters guaranteed over 1 mA to 1 mA collector  
current  
Y
Y
Extremely low noise  
Superior logging characteristics compared to  
conventional pairs  
Y
Plug-in replacement for presently available devices  
The LM194 and LM394 will provide a considerable improve-  
ment in performance in most applications requiring a closely  
Typical Applications  
Low Cost Accurate Square Root Circuit  
b
Low Cost Accurate Squaring Circuit  
b
6
2
(V )  
IN  
e
5
e
I
10  
I
10  
.
10 V  
OUT  
0
OUT  
IN  
TL/H/9241–2  
TL/H/9241–1  
*Trim for full scale accuracy  
C
1995 National Semiconductor Corporation  
TL/H/9241  
RRD-B30M115/Printed in U. S. A.  
1234567...14

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