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LM385BYZ-1.2/NOPB PDF预览

LM385BYZ-1.2/NOPB

更新时间: 2024-11-23 12:02:11
品牌 Logo 应用领域
德州仪器 - TI 电源电路参考电压源二极管
页数 文件大小 规格书
23页 1210K
描述
LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode

LM385BYZ-1.2/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TO-92, SIP3,.1,50
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.69Is Samacsys:N
模拟集成电路 - 其他类型:TWO TERMINAL VOLTAGE REFERENCEJESD-30 代码:O-PBCY-T3
JESD-609代码:e3长度:4.3 mm
功能数量:1输出次数:1
端子数量:3最高工作温度:70 °C
最低工作温度:最大输出电压:1.247 V
最小输出电压:1.223 V标称输出电压:1.235 V
封装主体材料:PLASTIC/EPOXY封装代码:TO-92
封装等效代码:SIP3,.1,50封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:3.6 mm
子类别:Voltage References表面贴装:NO
技术:BIPOLAR最大电压温度系数:150 ppm/ °C
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
微调/可调输出:NO最大电压容差:1%
宽度:4.3 mmBase Number Matches:1

LM385BYZ-1.2/NOPB 数据手册

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LM185-1.2-N, LM285-1.2-N, LM385-1.2-N  
www.ti.com  
SNVS742E JANUARY 2000REVISED APRIL 2013  
LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode  
Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N  
Careful design of the LM185-1.2-N has made the  
1
FEATURES  
device exceptionally tolerant of capacitive loading,  
making it easy to use in almost any reference  
application. The wide dynamic operating range allows  
its use with widely varying supplies with excellent  
regulation.  
2
±1% and 2% Initial Tolerance  
Operating Current of 10μA to 20mA  
1Ω Dynamic Impedance  
Low Temperature Coefficient  
Low Voltage Reference—1.235V  
The extremely low power drain of the LM185-1.2-N  
makes it useful for micropower circuitry. This voltage  
reference can be used to make portable meters,  
regulators or general purpose analog circuitry with  
battery life approaching shelf life.  
2.5V Device and Adjustable Device Also  
Available  
LM185-2.5 Series and LM185 Series,  
respectively  
Further, the wide operating current allows it to  
replace older references with a tighter tolerance part.  
DESCRIPTION  
The LM185-1.2-N is rated for operation over a 55°C  
to 125°C temperature range while the LM285-1.2-N is  
rated 40°C to 85°C and the LM385-1.2-N 0°C to  
70°C. The LM185-1.2-N/LM285-1.2-N are available in  
a hermetic TO package and the LM285-1.2-N/LM385-  
1.2-N are also available in a low-cost TO-92 molded  
package, as well as SOIC and SOT-23.  
The LM185-1.2-N/LM285-1.2-N/LM385-1.2-N are  
micropower 2-terminal band-gap voltage regulator  
diodes. Operating over a 10μA to 20mA current  
range, they feature exceptionally low dynamic  
impedance and good temperature stability. On-chip  
trimming is used to provide tight voltage tolerance.  
Since the LM185-1.2-N band-gap reference uses only  
transistors and resistors, low noise and good long  
term stability result.  
CONNECTION DIAGRAM  
Figure 1. T0-92 Package (LP)  
(Bottom View)  
Figure 3. SOIC Package  
* Pin 3 is attached to the Die Attach Pad  
(DAP) and should be connected to Pin 2 or  
left floating.  
Figure 2. SOT-23  
Figure 4. TO Package (NDV)  
(Bottom View)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  

LM385BYZ-1.2/NOPB 替代型号

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LM385BXZ-1.2/NOPB TI

完全替代

LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode
LM385Z-1.2/NOPB TI

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