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LM2904ITPX PDF预览

LM2904ITPX

更新时间: 2024-02-08 19:35:01
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
33页 1663K
描述
LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers

LM2904ITPX 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:TSSOP, TSSOP8,.19
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:20 weeks风险等级:0.95
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.02 µA25C 时的最大偏置电流 (IIB):0.15 µA
最小共模抑制比:60 dB标称共模抑制比:85 dB
频率补偿:YES最大输入失调电流 (IIO):0.04 µA
最大输入失调电压:9000 µVJESD-30 代码:S-PDSO-G8
JESD-609代码:e3长度:3 mm
低-偏置:NO低-失调:NO
微功率:NO负供电电压上限:-16 V
功能数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260功率:NO
电源:+-1.5/+-13/3/26 V可编程功率:NO
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.1 mm最小摆率:0.2 V/us
标称压摆率:0.6 V/us子类别:Operational Amplifier
最大压摆率:2 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:BIPOLAR温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30标称均一增益带宽:1100 kHz
最小电压增益:25000宽带:NO
宽度:3 mmBase Number Matches:1

LM2904ITPX 数据手册

 浏览型号LM2904ITPX的Datasheet PDF文件第1页浏览型号LM2904ITPX的Datasheet PDF文件第2页浏览型号LM2904ITPX的Datasheet PDF文件第4页浏览型号LM2904ITPX的Datasheet PDF文件第5页浏览型号LM2904ITPX的Datasheet PDF文件第6页浏览型号LM2904ITPX的Datasheet PDF文件第7页 
LM158-N, LM258-N, LM2904-N, LM358-N  
www.ti.com  
SNOSBT3H JANUARY 2000REVISED MARCH 2013  
ABSOLUTE MAXIMUM RATINGS(1)(2)  
LM158/LM258/LM358  
LM2904  
LM158A/LM258A/LM3  
58A  
Supply Voltage, V+  
Differential Input Voltage  
Input Voltage  
32V  
32V  
26V  
26V  
0.3V to +32V  
0.3V to +26V  
Power Dissipation(3)  
PDIP (P)  
830 mW  
550 mW  
530 mW  
435mW  
830 mW  
530 mW  
TO-99 (LMC)  
SOIC (D)  
DSBGA (YPB)  
Output Short-Circuit to GND (One  
Amplifier)(4)  
Input Current (VIN < 0.3V)(5)  
Operating Temperature Range  
LM358  
V+ 15V and TA = 25°C  
Continuous  
Continuous  
50 mA  
50 mA  
0°C to +70°C  
25°C to +85°C  
55°C to +125°C  
65°C to +150°C  
40°C to +85°C  
LM258  
LM158  
Storage Temperature Range  
Lead Temperature, PDIP (P)  
(Soldering, 10 seconds)  
Lead Temperature, TO-99 (LMC)  
(Soldering, 10 seconds)  
Soldering Information  
PDIP Package (P)  
65°C to +150°C  
260°C  
260°C  
300°C  
300°C  
Soldering (10 seconds)  
SOIC Package (D)  
260°C  
260°C  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
ESD Tolerance(6)  
215°C  
220°C  
250V  
215°C  
220°C  
250V  
(1) Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.  
(3) For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a +125°C maximum junction temperature  
and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which  
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be  
derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors, where  
possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.  
(4) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,  
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,  
continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result  
from simultaneous shorts on all amplifiers.  
(5) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of  
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is  
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to  
the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and  
normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than 0.3V (at 25°C).  
(6) Human body model, 1.5 kΩ in series with 100 pF.  
Copyright © 2000–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Links: LM158-N LM258-N LM2904-N LM358-N  

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