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LM25184-Q1 PDF预览

LM25184-Q1

更新时间: 2023-09-03 20:28:17
品牌 Logo 应用领域
德州仪器 - TI 光电转换器
页数 文件大小 规格书
40页 2658K
描述
具有 65V、4.1A 集成式 MOSFET 的汽车类 42V 输入电压非光电反激式转换器

LM25184-Q1 数据手册

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LM25184-Q1  
ZHCSKZ5A – MARCH 2020 – REVISED AUGUST 2020  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)(1)  
MIN  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–1.5  
–3  
MAX  
UNIT  
VIN to GND  
45  
EN/UVLO to GND  
TC to GND  
45  
6
Input voltage  
SS/BIAS to GND  
FB to GND  
14  
V
45.3  
0.3  
3
FB to VIN  
RSET to GND  
SW to GND  
70  
Output voltage  
V
SW to GND (20-ns transient)  
Operating junction temperature, TJ  
Storage temperature, Tstg  
–40  
–55  
150  
150  
°C  
°C  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress  
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under  
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per AEC Q100-002  
HBM ESD Classification Level 2 (1)  
±2000  
V(ESD)  
Electrostatic discharge  
All pins except 1, 4,  
5, and 8  
V
Charged device model (CDM), per  
AEC Q100-011  
CDM ESD Classification Level C4B  
±500  
±750  
Pins 1, 4, 5, and 8  
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
6.3 Recommended Operating Conditions  
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)  
MIN  
NOM  
MAX  
UNIT  
V
VIN  
Input voltage  
4.5  
42  
VSW  
SW voltage  
65  
V
VEN/UVLO  
VSS/BIAS  
TJ  
EN/UVLO voltage  
SS/BIAS voltage  
Operating junction temperature  
42  
V
13  
V
–40  
150  
°C  
6.4 Thermal Information  
LM25184-Q1  
THERMAL METRIC(1)  
NGU (WSON)  
8 PINS  
40.9  
UNIT  
RΘJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RΘJC(top)  
RΘJB  
36.9  
17.7  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
0.4  
ΨJB  
17.7  
RΘJC(bot)  
2.7  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics report.  
Copyright © 2022 Texas Instruments Incorporated  
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