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LM25101AM/NOPB

更新时间： 2024-11-15 12:02:39
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德州仪器 - TI 驱动器栅极栅极驱动
页数 文件大小 规格书
25页 1257K
描述
LM25101A/B/C 3A, 2A, and 1A 80V Half-Bridge Gate Drivers

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LM25101AM/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP, SOP8,.25
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.54高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C最大输出电流：3 A
标称输出峰值电流：3 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：12 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers最大压摆率：3 mA
最大供电电压：14 V最小供电电压：9 V
标称供电电压：12 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：0.056 µs接通时间：0.056 µs
宽度：3.9 mmBase Number Matches：1

LM25101AM/NOPB 数据手册

 浏览型号LM25101AM/NOPB的Datasheet PDF文件第2页浏览型号LM25101AM/NOPB的Datasheet PDF文件第3页浏览型号LM25101AM/NOPB的Datasheet PDF文件第4页浏览型号LM25101AM/NOPB的Datasheet PDF文件第5页浏览型号LM25101AM/NOPB的Datasheet PDF文件第6页浏览型号LM25101AM/NOPB的Datasheet PDF文件第7页 
LM25101A, LM25101B, LM25101C  
www.ti.com  
SNVS859B –JULY 2012–REVISED APRIL 2013  
LM25101A/B/C 3A, 2A, and 1A 80V Half-Bridge Gate Drivers  
Check for Samples: LM25101A, LM25101B, LM25101C  
1
FEATURES  
PACKAGES  
2
•
•
•
Independent high and low driver logic inputs  
Bootstrap supply voltage up to 100V DC  
•
•
•
•
•
SOIC-8  
SO Power Pad-8  
Drives both a high-side and low-side N-  
Channel MOSFETs  
WSON-8 (4 mm x 4 mm)  
WSON-10 (4 mm x 4 mm)  
MSOP Power Pad-8  
•
•
Fast propagation times (25 ns typical)  
Drives 1000 pF load with 8 ns rise and fall  
times  
DESCRIPTION  
The LM25101A/B/C High Voltage Gate Drivers are  
designed to drive both the high-side and the low-side  
N-Channel MOSFETs in a synchronous buck or a  
half-bridge configuration. The “A” versions provide a  
full 3A of gate drive while the “B” and “C” versions  
provide 2A and 1A respectively. The outputs are  
independently controlled with TTL input thresholds.  
An integrated high voltage diode is provided to  
charge the high-side gate drive bootstrap capacitor. A  
robust level shifter operates at high speed while  
consuming low power and providing clean level  
transitions from the control logic to the high-side gate  
driver. Under-voltage lockout is provided on both the  
low-side and the high-side power rails. These devices  
are available in the standard SOIC-8 pin, SO Power  
Pad-8, WSON-8 (4 mm x 4 mm), WSON-10 (4 mm x  
4 mm), and MSOP Power Pad-8 packages.  
•
Excellent propagation delay matching (3 ns  
typical)  
•
•
•
Supply rail under-voltage lockout  
Low power consumption  
Pin compatible with HIP2100/HIP2101  
TYPICAL APPLICATIONS  
•
•
•
•
•
•
•
Motor controlled drivers  
Half and Full Bridge power converters  
Synchronous buck converters  
Two switch forward power converters  
Forward with Active Clamp converters  
48V server power  
Solar DC/DC and DC/AC converters  
SIMPLIFIED BLOCK DIAGRAM  
HB  
HO  
UVLO  
DRIVER  
LEVEL  
SHIFT  
HS  
HI  
VDD  
UVLO  
LO  
LI  
DRIVER  
VSS  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012–2013, Texas Instruments Incorporated  
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LM25101AM/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LM25101AMX/NOPB TI

完全替代

 LM25101A/B/C 3A, 2A, and 1A 80V Half-Bridge Gate Drivers

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