LL6263

更新时间： 2024-01-25 06:48:03

品牌	Logo	应用领域
固锝 - GOOD-ARK		整流二极管信号二极管肖特基二极管
页数	文件大小	规格书
2页	107K
描述
Small-Signal Diode Schottky Diodes

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中文翻译

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技术参数
数据手册

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LL6263 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.41 V
最大非重复峰值正向电流：	2 A	元件数量：	1
最高工作温度：	125 °C	最大重复峰值反向电压：	60 V
最大反向恢复时间：	0.001 µs	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

LL6263 数据手册

LL5711 and LL6263

Small-Signal Diode

Schottky Diodes

Features

ꢀ For general purpose applications

ꢀ Metal-on-silicon Schottky barrier device which is protected by a

PN junction guard ring.

ꢀ The low forward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and coupling

diodes for fast switching and low logic level applications.

ꢀ This diode is also available in the DO-35 case with type

designation 1N5711 and 1N6263.

Mechanical Data

ꢀ Case: MiniMELF Glass Case (SOD-80)

ꢀ Weight: approx. 0.05g

ꢀ Cathode Band Color: Green

Maximum Ratings and Thermal Characteristics

(Ratings at 25^oC ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

LL5711

LL6263

Peak inverse voltage

V_RRM

Volts

Power dissipation (Infinite heatsink)

P_tot

I_FSM

400 ⁽¹⁾

Amps

^oC

Maximum single cycle surge 10 us square wave

Junction temperature

2.0

125

Storage temperature range

T_S

-55 to +150

^oC

Electrical Characteristics

(T_J=25^oC unless otherwise noted.)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

LL5711

Reverse breakdown voltage

LL6263

V_(BR)R

I_R

I_R=10uA

Volts

Leakage current

V_R=50V

200

I_F=1.0mA

I_F=15mA

0.41

1.0

Forward voltage drop

Junction capacitance

Reverse recovery time

V_F

Volt

C_tot

t_rr

V_R=0V, f=1MHz

2.2

I_F=I_R=5mA,

recover to 0.1I_R

Notes:

1. Valid provided that electrodes are kept at ambient temperature.

694

中文翻译

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