生命周期: | Obsolete | 包装说明: | O-LELF-R2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.76 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最大输出电流: | 0.2 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 120 V | 最大反向恢复时间: | 0.3 µs |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LL658X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, | |
LL659R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon, | |
LL659X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon, | |
LL660R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, | |
LL660X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, | |
LL661 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 240V V(RRM), Silicon, | |
LL661R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 240V V(RRM), Silicon, | |
LL661X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 240V V(RRM), Silicon, | |
LL6650 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB | |
LL700 | SEMTECH |
获取价格 |
SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES |