SMALL SIGNAL
SWITCHING DIODES
LL4148
Features
· Silicon epitaxial planar diode
· Fast switching diodes
MELF (DO-35)
· 500mW power dissipation
SOLDERABLE ENDS
· This diode is also available in the DO-35 case with
the type designation 1N4148
0.020(0.50)
0.011(0.28)
0.063(1.60)
0.146(3.70)
Mechanical Data
0.051(1.30)
0.130(3.30)
· Case: Mini-MELF glass case(DO-35)
· Weight: Approx. 0.05 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol
Value
75
Units
Volts
Volts
Reverse Voltage
V
R
Peak Reverse Voltage
100
VRM
Average rectified current, Half wave rectification with
1501)
mA
I
AV
Resistive load at T
A
=25℃ and F≥50Hz
Surge forward current at t<1S and T
J=25℃
500
mA
I
FSM
Power dissipation at T
Junction temperature
A=25℃
5001)
175
mW
Ptot
℃
℃
TJ
Storage temperature range
-65 to +175
TSTG
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Min.
Typ.
Max.
Units
Forward voltage
Leakage current
1
Volts
V
F
at V
at V
at V
R
R
R
=20V
=75V
=20V, T
25
5
50
I
I
I
R
R
R
nA
μA
μA
J
=150℃
Junction Capacitance at V
R
=VF
=0V
4
pF
CJ
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz
2.5
Volts
V
fr
Reverse Recovery time from I
=6V, R =100Ω
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, VRF=2V
F=10mA to IR=1mA,
4
ns
trr
V
R
L
3501)
K/W
RθJA
η
0.45
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)