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LL4148-G PDF预览

LL4148-G

更新时间: 2024-01-16 18:53:35
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管小信号开关二极管
页数 文件大小 规格书
3页 179K
描述
Small-Signal Switching Diode

LL4148-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.64
Base Number Matches:1

LL4148-G 数据手册

 浏览型号LL4148-G的Datasheet PDF文件第2页浏览型号LL4148-G的Datasheet PDF文件第3页 
Small-Signal Switching Diode  
LL4148-G  
Reverse Voltage:100V  
Forward Current: 150 mA  
Features  
Silicon Epitaxial Planar Diode  
MiniMELF (SOD-80)  
Fast switching diode in MiniMELF case especially suited  
for automatic insertion.  
This diode is also available in other case styles including the  
standard 0603 case with the type designation CDSU4148, the  
standard 0805 case withthe type designation CDSS4148 and  
the standard 1206 case with the type designation CDSN4148  
Mechanical Data  
Case: MiniMELF Glass Case (SOD-80)  
Weight: approx. 0.05g  
Cathode Band Color: Black  
Dimensions in mm  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
VR  
Reverse Voltage  
75  
V
VRM  
IF  
Peak Reverse Voltage  
Forward DC Current at Tamb = 25°C(1)  
100  
200  
V
mA  
Average Rectified Current: Half Wave Rectification with  
Resistive Load at Tamb = 25°C f ³ 50 Hz(1)  
Surge Forward Current at t < 1s and Tj = 25°C  
Power Dissipation at Tamb = 25°C(1)  
Thermal Resistance Junction to Ambient Air(2)  
Thermal Resistance Junction to tie-point  
Junction Temperature  
IF(AV)  
150  
mA  
IFSM  
Ptot  
RèJA  
RqJtp  
Tj  
500  
500  
mA  
mW  
°C/W  
°C/W  
°C  
350  
300  
175  
TS  
Storage Temperature  
–65 to +175  
°C  
Electrical Characteristics (Tj = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min Typ Max Unit  
Forward Voltage  
V
F
I
F
= 10mA  
1
25  
5
V
V
R
= 20V  
= 75V  
nA  
Leakage Current  
IR  
V
R
µ
A
VR  
= 20V, T  
= V  
J
= 150°C  
= 0  
50  
4
µA  
pF  
Capacitance  
C
tot  
V
F
R
tp = 0.1µs, Rise time<30ns fp  
= 5 to 100kHz  
Voltage Rise when Switching ON  
(tested with 50 mAForward Pulses)  
V
fr  
2.5  
4
V
IF  
= 10mA, IR = 1mA,  
Reverse Recovery Time  
trr  
ns  
VR  
= 6V, RL = 100Ù  
Rectification Efficiency (See third page  
)
f = 100MHz, VRF = 2V  
0.45  
çí  
Notes: (1) Valid provided that electrodes are kept at ambient temperature  
(2) Device mounted on FR4 printed-circuit board  
MDS0209003A  
Page 1  

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