Small-Signal Switching Diode
LL4148-G
Reverse Voltage:100V
Forward Current: 150 mA
Features
Silicon Epitaxial Planar Diode
MiniMELF (SOD-80)
Fast switching diode in MiniMELF case especially suited
for automatic insertion.
This diode is also available in other case styles including the
standard 0603 case with the type designation CDSU4148, the
standard 0805 case withthe type designation CDSS4148 and
the standard 1206 case with the type designation CDSN4148
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Black
Dimensions in mm
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
VR
Reverse Voltage
75
V
VRM
IF
Peak Reverse Voltage
Forward DC Current at Tamb = 25°C(1)
100
200
V
mA
Average Rectified Current: Half Wave Rectification with
Resistive Load at Tamb = 25°C f ³ 50 Hz(1)
Surge Forward Current at t < 1s and Tj = 25°C
Power Dissipation at Tamb = 25°C(1)
Thermal Resistance Junction to Ambient Air(2)
Thermal Resistance Junction to tie-point
Junction Temperature
IF(AV)
150
mA
IFSM
Ptot
RèJA
RqJtp
Tj
500
500
mA
mW
°C/W
°C/W
°C
350
300
175
TS
Storage Temperature
–65 to +175
°C
Electrical Characteristics (Tj = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Forward Voltage
V
F
I
F
= 10mA
—
—
—
—
—
—
—
—
—
—
1
25
5
V
V
R
= 20V
= 75V
nA
Leakage Current
IR
V
R
µ
A
VR
= 20V, T
= V
J
= 150°C
= 0
50
4
µA
pF
Capacitance
C
tot
V
F
R
tp = 0.1µs, Rise time<30ns fp
= 5 to 100kHz
Voltage Rise when Switching ON
(tested with 50 mAForward Pulses)
V
fr
—
—
—
—
—
2.5
4
V
IF
= 10mA, IR = 1mA,
Reverse Recovery Time
trr
ns
—
VR
= 6V, RL = 100Ù
Rectification Efficiency (See third page
)
f = 100MHz, VRF = 2V
0.45
—
çí
Notes: (1) Valid provided that electrodes are kept at ambient temperature
(2) Device mounted on FR4 printed-circuit board
MDS0209003A
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