Datasheet > LL352

LL352

更新时间： 2024-11-28 11:33:19

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	166K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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LL352 数据手册

LL352

SILICON EPITAXIAL PLANAR DIODE

Features

•

Small package

Low forward voltage

Fast reverse recovery time

Small total capacitance

Applications

Extreme fast switches

Absolute Maximum Ratings (T_j= 25^OC)

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

200

Maximum Peak Forward Current

Surge Current (10ms)

I_FM

I_FSM

Average Forward Current

Power Dissipation

100

^OC

P_tot

T_j

200

Junction Temperature

125

Storage Temperature Range

T_s

-55 … +125

Characteristics at T_j= 25 ^OC

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

I_F= 1mA

I_F= 10mA

I_F= 100mA

V_F

0.62

0.75

0.98

1.2

Reverse Current

V_R= 30V

V_R= 80V

I_R

0.1

0.5

μA

Total Capacitance

V_R= 0, f = 1MH_Z

I_F= 10mA

C_T

t_rr

0.5

1.6

Reverse Recovery Time

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/02/2003

中文翻译

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