Datasheet > LL1608--FH6N8S

LL1608--FH6N8S

更新时间： 2024-01-06 10:33:18

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
25页	1134K
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Gallium Arsenide pHEMT RF Power Field Effect Transistor

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LL1608--FH6N8S 数据手册

Document Number: MRFG35010AN

Rev. 4, 8/2013

Freescale Semiconductor

Technical Data

Gallium Arsenide pHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized

from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

customer premise equipment (CPE) applications.

MRFG35010ANT1



Typical Single--Carrier W--CDMA Performance: V_DD= 12 Vdc, I_DQ= 130 mA,

3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%

Probability on CCDF.

500--5000 MHz, 9 W, 12 V

POWER FET

GaAs pHEMT

Frequency

(MHz)

(W)

ACPR

(dBc)



IRL

(dB)

out

(dB)

14.5

13.0

11.5

(%)

24.0

25.0

30.0

750

2140

2650

--44.0

--43.0

-- 1 5

-- 1 4

-- 1 5

Features



9 Watts P1dB @ 3550 MHz, CW

Excellent Phase Linearity and Group Delay Characteristics

High Efficiency and High Linearity

PLD--1.5

PLASTIC

In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

dBm

C

Drain--Source Voltage

Gate--Source Voltage

RF Input Power

-- 5

DSS

Storage Temperature Range

stg

--65 to +150

175

(1)

Channel Temperature

C

Table 2. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



6.5

C/W

Case Temperature 77C, 1 W CW

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

1. For reliable operation, the operating channel temperature should not exceed 150C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRFG35010ANT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...25

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