Datasheet > LL103B/D1

LL103B/D1

更新时间： 2024-09-25 08:52:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	100K
描述
Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, GLASS, MINIMELF-2

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LL103B/D1 数据手册

LL103A thru LL103C

Vishay Semiconductors

formerly General Semiconductor

Schottky Diodes

Features

• For general purpose applications

MiniMELF (SOD-80C)

• The LL103A, B, C series is a metal-on-silicon

Schottky barrier device which is protected by a

PN junction guard ring.

Cathode Band

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications. Other

applications are click suppression, efficient full wave

bridges in telephone subsets, and blocking diodes in

rechargeable low voltage battery systems.

.063 (1.6)

.051 (1.3)

Dia.

.019 (0.48)

.011 (0.28)

• This diode is also available in the DO-35 case with

type designation SD103A, B, C and in the SOD-

123 case with type designation SD103AW,

SD103BW, SD103CW.

.146 (3.7)

.130 (3.3)

Dimensions in inches and (millimeters)

Mechanical Data

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

Cathode Band Color: Green

Packaging Codes/Options:

D1/10K per 13” reel (8mm tape), 20K/box

D2/2.5K per 7” reel (8mm tape), 20K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

LL103A

LL103B

LL103C

Peak Inverse Voltage

V_RRM

Power Dissipation (Infinite Heatsink)

Single Cycle Surge 60-Hz Sine Wave

Thermal Resistance Junciton to Ambient

Junction Temperature

P_tot

I_FSM

R_θJA

T_j

400⁽¹⁾

300⁽¹⁾

°CW

°C

125

Storage Temperature Range

T_S

–55 to +150

°C

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

LL103A

LL103B

LL103C

V_R= 30V

V_R= 20V

V_R= 10V

—

Leakage Current

I_R

µA

I_F= 20mA

I_F= 200mA

—

0.37

0.6

V_F

C_tot

t_rr

Forward Voltage Drop

Junction Capacitance

V_R= 0V, f = 1MHz

—

I_F= I_R= 50mA to 200mA,

recover to 0.1I_R

Reverse Recovery Time

—

Note: (1) Valid provided that electrodes are kept at ambient temperature.

Document Number 88206

13-May-02

www.vishay.com

12 3

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