Datasheet
5. Electrical Characteristics On
Value
Typ
1.8
Characteristic
Sym bol
Conditions
Tem perature
Unit
Min
1.5
0.7
1.7
Max
TJ = 25 °C
TJ = 175 °C
TJ = -40 °C
2.1
1.3
2.3
IC = 1.0 mA,
VGE = VCE
Gate Threshold Voltage
VGE(th)
1.0
V
2.0
Threshold Temperature Coefficient
(Negative)
-
-
-
4.0
4.6
5.2
mV/°C
IC = 10 A, VGE = 3.7 V
IC = 10 A, VGE = 4.0 V
IC = 15 A, VGE = 4.0 V
TJ = -40 °C to 175 °C
TJ = -40 °C to 175 °C
TJ = -40 °C to 175 °C
TJ = 25 °C
0.8
0.8
0.8
10
1.11
1.10
1.24
19
1.97
1.85
2.00
25
Collector-Emitter On-Voltage
Forward Transconductance
V
V
CE(on)
gfs
VCE = 5.0 V, IC = 6.0 A
Mhos
6. Dynam ic Characteristics
Value
Typ
1400
65
Characteristic
Sym bol
Conditions
Tem perature
Unit
Min
1100
50
Max
1600
80
Input Capacitance
CISS
COSS
CRSS
VCE = 25 V,
pF
Output Capacitance
Transfer Capacitance
TJ = -25 °C
f = 10 kHz
15
20
25
7. Sw itching Characteristics
Value
Typ
Characteristic
Sym bol
Conditions
Tem perature
Unit
Min
Max
Turn-on Delay Time (Resistive)
10% VGE to 10% IC
td(on)R
trR
td(off)R
tfR
td(off)L
tfL
0.1
1.0
3.4
4.5
8.0
9.7
8.3
2.0
Rise Time (Resistive)
10% IC to 90% IC
Turn-off Delay Time (Resistive)
90% VGE to 90% IC
Fall Time (Resistive)
90% IC to 10% IC
Turn-off Delay Time (Inductive)
90% VGE to 90% IC
1.0
2.0
3.0
6.5
6.0
6.0
8.0
12
V
RG
CE = 14 V, VGE = 5.0 V,
µs
TJ = -40 °C to 175 °C
L
12.5
11
V
CE = BVCES, L = 0.5 mH,
RG IC = 10 A,
VGE = 5.0 V
TJ = -40 °C to 175 °C
µs
Fall Time (Inductive)
90% IC to 10% IC
Note: Electrical Characteristics at temperature other than 25 °C, Dynamic and Switching characteristics are not subject to production testing. Not subject
to production testing.
4
Specifications are subject to change without notice.
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Revised: 3/30/2020