Datasheet > LGB8207TH

LGB8207TH

更新时间： 2023-12-06 20:13:07

品牌	Logo	应用领域
力特 - LITTELFUSE		栅驱动双极性晶体管高压装置驱动器
页数	文件大小	规格书
10页	494K
描述
这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于感应线圈驱动器应用。主要用途包括点火、直接燃油喷射或需要高压与高电流切换的应用。功能与特色: 应用: 终端产品:

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LGB8207TH 数据手册

Datasheet

LGB8207TH

365 V, 20 A N-Channel Ignition IGBT

Product Sum m ary

Characteristic

Value

365

Unit

CES

I_C

Description

This Logic Level Insulated Gate Bipolar Transistor

(IGBT) features monolithic circuitry integrating ESD

inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever

high voltage and high current switching is required.

Agency Approvals

Environm ental Approvals

Features

•

Applications

•

Pinout Diagram

Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage Interfaces Power Loads to

Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Minimum Avalanche Energy 500 mJ

• Gate Resistor (R_G

• AEC-Q101 Qualified

•

Applications

Functional Diagram

• Ignition Systems

Specifications are subject to change without notice.

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Revised: 3/24/2020

12 3 4 5 6 7...10

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